JPS5694674A - Thin-film solar cell - Google Patents

Thin-film solar cell

Info

Publication number
JPS5694674A
JPS5694674A JP17071779A JP17071779A JPS5694674A JP S5694674 A JPS5694674 A JP S5694674A JP 17071779 A JP17071779 A JP 17071779A JP 17071779 A JP17071779 A JP 17071779A JP S5694674 A JPS5694674 A JP S5694674A
Authority
JP
Japan
Prior art keywords
film
thin amorphous
type thin
solar cell
sixge1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17071779A
Other languages
Japanese (ja)
Other versions
JPS6225275B2 (en
Inventor
Setsuo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17071779A priority Critical patent/JPS5694674A/en
Publication of JPS5694674A publication Critical patent/JPS5694674A/en
Publication of JPS6225275B2 publication Critical patent/JPS6225275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

PURPOSE:To obtain the cell having large conversion efficiency by a method wherein the solar cell of PIN, PN<->N, NP<->P and the like is prepared by using a thin amorphous SiocGe1-x film and, is addition, the Si density of the layer of one of the above is increased gradually toward a photoreceiving surface. CONSTITUTION:To the back surface of a glass substrate 11 to be the photoreceiving surface is connected transparent conductive film 12 to be a surface electrode, whereon a P type thin amorphous Si film 13 is formed. Next, on the film 13, an I type thin amorphous SixGe1-x or N<-> type thin amorphous SixGe1-x film 14 which is not doped is formed through lamination with the composition ratio X thereof being decreased gradually. This may be conducted by changing the ratio of an ambient gas used when the thin film is formed to SiH4GeH4. Later, to the surface of the film 14 is connected an N type thin amorphous Si0.5Ge0.5 film 15, whereto the back-surface electrode 16 is fitted. By this constitution, the sensitivity on the side of wavelength longer than 0.6mum is improved and the conversion efficiency is also raised to about 2.9%.
JP17071779A 1979-12-27 1979-12-27 Thin-film solar cell Granted JPS5694674A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17071779A JPS5694674A (en) 1979-12-27 1979-12-27 Thin-film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17071779A JPS5694674A (en) 1979-12-27 1979-12-27 Thin-film solar cell

Publications (2)

Publication Number Publication Date
JPS5694674A true JPS5694674A (en) 1981-07-31
JPS6225275B2 JPS6225275B2 (en) 1987-06-02

Family

ID=15910083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17071779A Granted JPS5694674A (en) 1979-12-27 1979-12-27 Thin-film solar cell

Country Status (1)

Country Link
JP (1) JPS5694674A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3305030A1 (en) * 1982-02-15 1983-08-25 Director-General, Agency of Industrial Science and Technology, Tokyo AMORPHE SOLAR CELL
JPS58145171A (en) * 1981-12-14 1983-08-29 エナジー・コンバーション・デバイセス・インコーポレーテッド Photovoltaic device for increasing current
JPS5990959A (en) * 1982-11-16 1984-05-25 Sanyo Electric Co Ltd Amorphous silicon field-effect type transistor
JPS61232685A (en) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol Amorphous silicon solar battery and manufacture thereof
EP0213622A2 (en) * 1985-08-29 1987-03-11 Sumitomo Electric Industries Limited Amorphous photovoltaic elements
JPS62165374A (en) * 1986-01-16 1987-07-21 Sumitomo Electric Ind Ltd Amorphous photovoltaic element
US20100059119A1 (en) * 2008-09-09 2010-03-11 Electronics And Telecommunications Research Institute Solar cell and method of manufacturing the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
2ND E.C.PHOTOVOLTAIC SOLAR ENERGY CONFERENCE=1979 *
JOURNAL OF APPLIED PHYSICS=1975 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145171A (en) * 1981-12-14 1983-08-29 エナジー・コンバーション・デバイセス・インコーポレーテッド Photovoltaic device for increasing current
JPH0434314B2 (en) * 1981-12-14 1992-06-05 Enaajii Konbaajon Debaisesu Inc
DE3305030A1 (en) * 1982-02-15 1983-08-25 Director-General, Agency of Industrial Science and Technology, Tokyo AMORPHE SOLAR CELL
DE3305030C2 (en) * 1982-02-15 1992-05-21 Director-General Of Agency Of Industrial Science And Technology, Tokio/Tokyo, Jp
JPS5990959A (en) * 1982-11-16 1984-05-25 Sanyo Electric Co Ltd Amorphous silicon field-effect type transistor
JPS61232685A (en) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol Amorphous silicon solar battery and manufacture thereof
EP0213622A2 (en) * 1985-08-29 1987-03-11 Sumitomo Electric Industries Limited Amorphous photovoltaic elements
JPS62165374A (en) * 1986-01-16 1987-07-21 Sumitomo Electric Ind Ltd Amorphous photovoltaic element
US20100059119A1 (en) * 2008-09-09 2010-03-11 Electronics And Telecommunications Research Institute Solar cell and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6225275B2 (en) 1987-06-02

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