JPS5669872A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS5669872A
JPS5669872A JP14665079A JP14665079A JPS5669872A JP S5669872 A JPS5669872 A JP S5669872A JP 14665079 A JP14665079 A JP 14665079A JP 14665079 A JP14665079 A JP 14665079A JP S5669872 A JPS5669872 A JP S5669872A
Authority
JP
Japan
Prior art keywords
layer
measured
substrate
conductive film
collecting electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14665079A
Other languages
Japanese (ja)
Inventor
Hiroshi Haruki
Yoshiyuki Uchida
Shinji Nishiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP14665079A priority Critical patent/JPS5669872A/en
Publication of JPS5669872A publication Critical patent/JPS5669872A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To minimize the lowering of output by a method wherein photoelectric converting active layers are formed on the approximate whole surface of a conductive substrate, a light transmitting conductive film is coated on the active layers, the photoelectric characteristics of a limited region of the conductive film and the substrate are measured, and a current-collecting electrode is made up to a section except faulty regions. CONSTITUTION:Amorphous Si is formed on a stainless steel plate 1 in such a manner that an N<+> layer 2, an i layer 3 and a P<+> layer 4 are laminated successively. And a transparent conductive film 7 in In and an Sn oxide is built up. Photoelectric characteristics are measured between the film 7 and the substrate 1. When measurement is made at about 1cm intervals at that time, it can made without the overlap of regions to be measured. An insulating layer 8 is attached onto a defective location, measuring value thereof does not reach a fixed value, and a current-collecting electrode layer 5 is formed. Thus, reactive power is removed, and high output is obtained.
JP14665079A 1979-11-13 1979-11-13 Manufacture of solar cell Pending JPS5669872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14665079A JPS5669872A (en) 1979-11-13 1979-11-13 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14665079A JPS5669872A (en) 1979-11-13 1979-11-13 Manufacture of solar cell

Publications (1)

Publication Number Publication Date
JPS5669872A true JPS5669872A (en) 1981-06-11

Family

ID=15412521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14665079A Pending JPS5669872A (en) 1979-11-13 1979-11-13 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS5669872A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
US4510674A (en) * 1982-10-21 1985-04-16 Sovonics Solar Systems System for eliminating short circuit current paths in photovoltaic devices
US4590327A (en) * 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method
US4633034A (en) * 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
EP0603260A4 (en) * 1991-09-13 1994-07-27 United Solar Systems Corp Photovoltaic device including shunt preventing layer and method for the deposition thereof.

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
US4464823A (en) * 1982-10-21 1984-08-14 Energy Conversion Devices, Inc. Method for eliminating short and latent short circuit current paths in photovoltaic devices
US4510674A (en) * 1982-10-21 1985-04-16 Sovonics Solar Systems System for eliminating short circuit current paths in photovoltaic devices
US4590327A (en) * 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method
US4633034A (en) * 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
EP0603260A4 (en) * 1991-09-13 1994-07-27 United Solar Systems Corp Photovoltaic device including shunt preventing layer and method for the deposition thereof.

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