JPS56114384A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS56114384A JPS56114384A JP1707380A JP1707380A JPS56114384A JP S56114384 A JPS56114384 A JP S56114384A JP 1707380 A JP1707380 A JP 1707380A JP 1707380 A JP1707380 A JP 1707380A JP S56114384 A JPS56114384 A JP S56114384A
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- layer
- conductive film
- solar battery
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 abstract 6
- 239000010409 thin film Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005566 electron beam evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To improve a conversion efficiency of the solar battery by allowing a thin P type layer to be formed by a method wherein when a lift penetrable conductive film composed of a semiconductor on a light penetrable insulated substrate and each conductive type noncrystalline Si layer of PIN are layer-built in sequence to make the solar battery, a metallic thin film is inserted between the conductive film and the P type layer. CONSTITUTION:The light penetrable conductive film 2 sich as indium oxide and tin is cover-attached on the light penetrable insulated substrate 1 made of glass or the like, and the noncrystalline Si layer 3 comprising the P type layer 5, I-type layer 6 and N type layer 7 are formed on the film 2 to make the solar battery. With such a construction, the metallic thin film 8 large in a work function such as plastinum, rhodium, iridium, gold and the like which are made 10-100Angstrom in thickness are left formed between the conductive film 2 and the P type layer 5 by means of an electron beam evaporation, and an A back electrode 4 is attached to the N type layer 7. Whereby the P type layer 5 is not brought into direct contact with the conductive film 2 even being separated in island-shape, due to the extreme thinness of the layer 5 as 50Angstrom , but contacts with the thin film 8 to form a shot junction, and an open-circuit voltage is not decreased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1707380A JPS56114384A (en) | 1980-02-13 | 1980-02-13 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1707380A JPS56114384A (en) | 1980-02-13 | 1980-02-13 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56114384A true JPS56114384A (en) | 1981-09-08 |
| JPS6143870B2 JPS6143870B2 (en) | 1986-09-30 |
Family
ID=11933800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1707380A Granted JPS56114384A (en) | 1980-02-13 | 1980-02-13 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56114384A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5878473A (en) * | 1981-11-05 | 1983-05-12 | Seiko Epson Corp | Thin film solar battery |
| JPS5892280A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS5892281A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| US4584427A (en) * | 1984-10-22 | 1986-04-22 | Atlantic Richfield Company | Thin film solar cell with free tin on tin oxide transparent conductor |
| JPS6199385A (en) * | 1984-10-19 | 1986-05-17 | Sanyo Electric Co Ltd | Photoelectromotive force element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013105488A1 (en) | 2012-01-11 | 2013-07-18 | パナソニック株式会社 | Solar cell element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
-
1980
- 1980-02-13 JP JP1707380A patent/JPS56114384A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5878473A (en) * | 1981-11-05 | 1983-05-12 | Seiko Epson Corp | Thin film solar battery |
| JPS5892280A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS5892281A (en) * | 1981-11-27 | 1983-06-01 | Seiko Epson Corp | Thin film solar cell |
| JPS6199385A (en) * | 1984-10-19 | 1986-05-17 | Sanyo Electric Co Ltd | Photoelectromotive force element |
| US4584427A (en) * | 1984-10-22 | 1986-04-22 | Atlantic Richfield Company | Thin film solar cell with free tin on tin oxide transparent conductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6143870B2 (en) | 1986-09-30 |
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