JPS5615085A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS5615085A JPS5615085A JP9072979A JP9072979A JPS5615085A JP S5615085 A JPS5615085 A JP S5615085A JP 9072979 A JP9072979 A JP 9072979A JP 9072979 A JP9072979 A JP 9072979A JP S5615085 A JPS5615085 A JP S5615085A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- type
- film
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To increase electrical energy obtainable from a single sheet of solar battery element by composing a metallic collecting electrode on a semiconductor layer in a shape which can transmit an incident ray in abundance. CONSTITUTION:On a substrate 1, a transparent conductive layer 2 consisted of SnO2 or In2O3 is provided and a semiconductor 3 is provided on said layer 2. This noncrystalline silicon layer 3 has a constitution wherein an intrinsic region is superpositioned on an N-type or a P-type region, on which a thin platinum film 4 is provided and a Schottky barrier is formed between said film 4 and a semiconductor layer 3. In order to leave as large an exposure area as possible on the above film 4, for instance, a comb-type metallic collecting electrode 5 is provided. The electrode 5 is, for instance, formed by a double-layer structure consisted of a 0.1mum thick titanium layer, having an excellent adhesive power to a semiconductor, and a 1mum thick silver layer coating on the former.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9072979A JPS5615085A (en) | 1979-07-17 | 1979-07-17 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9072979A JPS5615085A (en) | 1979-07-17 | 1979-07-17 | Solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5615085A true JPS5615085A (en) | 1981-02-13 |
Family
ID=14006636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9072979A Pending JPS5615085A (en) | 1979-07-17 | 1979-07-17 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5615085A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4667858A (en) * | 1983-08-05 | 1987-05-26 | Toshiba Ceramics Co., Ltd. | Filler material for filling an outlet aperture of a casting ladle or similar container and a process for producing the filler material |
| JPH0284313A (en) * | 1988-09-21 | 1990-03-26 | Fujikura Ltd | Crosshead for continuous extrusion coating of cores having different diameters |
| JPH02260465A (en) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | Solar cell |
-
1979
- 1979-07-17 JP JP9072979A patent/JPS5615085A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4667858A (en) * | 1983-08-05 | 1987-05-26 | Toshiba Ceramics Co., Ltd. | Filler material for filling an outlet aperture of a casting ladle or similar container and a process for producing the filler material |
| JPH0284313A (en) * | 1988-09-21 | 1990-03-26 | Fujikura Ltd | Crosshead for continuous extrusion coating of cores having different diameters |
| JPH02260465A (en) * | 1989-03-30 | 1990-10-23 | Matsushita Electric Ind Co Ltd | Solar cell |
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