JPS55160475A - Amorphous thin film solar battery - Google Patents

Amorphous thin film solar battery

Info

Publication number
JPS55160475A
JPS55160475A JP6854979A JP6854979A JPS55160475A JP S55160475 A JPS55160475 A JP S55160475A JP 6854979 A JP6854979 A JP 6854979A JP 6854979 A JP6854979 A JP 6854979A JP S55160475 A JPS55160475 A JP S55160475A
Authority
JP
Japan
Prior art keywords
film
amorphous
solar battery
thin film
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6854979A
Other languages
Japanese (ja)
Inventor
Yutaka Yamauchi
Katsumi Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6854979A priority Critical patent/JPS55160475A/en
Publication of JPS55160475A publication Critical patent/JPS55160475A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain an amorphous thin film solar battery having high photoelectric conversion efficiency and large area with preferable reproducibility by employing amorphous high molecular nitride formed by plasma synthesization as a Schottky barrier material. CONSTITUTION:An Al-Ag grid electrode 2 is evaporated with mask on a glass substrate 1, and an In2O3-SnO2 film 3 is formed thereon. Then, an amorphous high molecular nitride film 4 is formed by plasma synthesization thereon. Thereafter, amorphous Si film (a-SiFX) is formed thereon. Subsequently, an N<+> type amorphous Si film [a-SiFX(n<+>)] 7 is formed thereon. Then, an Al-Ag back electrode 8 is evaporated with mask, and an Si3N4 film 9 is coated thereon. In this manner, a Schottky barrier is formed between the layers 4 and 6, and a photovoltaic force is picked up between the electrodes 2 and 8 in response to the incident light irradiated from the side of the substrate 1.
JP6854979A 1979-05-31 1979-05-31 Amorphous thin film solar battery Pending JPS55160475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6854979A JPS55160475A (en) 1979-05-31 1979-05-31 Amorphous thin film solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6854979A JPS55160475A (en) 1979-05-31 1979-05-31 Amorphous thin film solar battery

Publications (1)

Publication Number Publication Date
JPS55160475A true JPS55160475A (en) 1980-12-13

Family

ID=13376942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6854979A Pending JPS55160475A (en) 1979-05-31 1979-05-31 Amorphous thin film solar battery

Country Status (1)

Country Link
JP (1) JPS55160475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489568A (en) * 1987-09-30 1989-04-04 Sharp Kk Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489568A (en) * 1987-09-30 1989-04-04 Sharp Kk Manufacture of semiconductor device

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