JPS568883A - Photovoltaic element - Google Patents

Photovoltaic element

Info

Publication number
JPS568883A
JPS568883A JP8469079A JP8469079A JPS568883A JP S568883 A JPS568883 A JP S568883A JP 8469079 A JP8469079 A JP 8469079A JP 8469079 A JP8469079 A JP 8469079A JP S568883 A JPS568883 A JP S568883A
Authority
JP
Japan
Prior art keywords
layer
around
layers
amorphous
photovoltaic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8469079A
Other languages
Japanese (ja)
Other versions
JPS6115598B2 (en
Inventor
Yoshihiro Hamakawa
Hiroaki Okamoto
Yoshiteru Nitsuta
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8469079A priority Critical patent/JPS568883A/en
Publication of JPS568883A publication Critical patent/JPS568883A/en
Publication of JPS6115598B2 publication Critical patent/JPS6115598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Transform (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To heighten the energy conversion efficiency by adding an N-type amorphous Si layer to an amorphous Si solar cell composing of p-i-n structure wherein the output voltage is raised. CONSTITUTION:A clear electrode film 12 is adhered by successively stacking n-i-p type and additional N-type amorphous Si layers 8-11 on a metal substrate 7. The Si layers 8-11 are obtained by glow discharge decomposition method and the thickness of each film is as follows: The layer 8 is around 20-500Angstrom . The layer 9 is around 3,000-20,000Angstrom . The layer 10 is around 50-300Angstrom . The layer 11 is around 200-500Angstrom . This structure remarkably improve various characteristics as photovoltaic element.
JP8469079A 1979-07-04 1979-07-04 Photovoltaic element Granted JPS568883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8469079A JPS568883A (en) 1979-07-04 1979-07-04 Photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8469079A JPS568883A (en) 1979-07-04 1979-07-04 Photovoltaic element

Publications (2)

Publication Number Publication Date
JPS568883A true JPS568883A (en) 1981-01-29
JPS6115598B2 JPS6115598B2 (en) 1986-04-24

Family

ID=13837659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8469079A Granted JPS568883A (en) 1979-07-04 1979-07-04 Photovoltaic element

Country Status (1)

Country Link
JP (1) JPS568883A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63275188A (en) * 1987-05-07 1988-11-11 Fuji Electric Co Ltd Photovoltaic device
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144596U (en) * 1984-08-27 1986-03-24 動力炉・核燃料開発事業団 Control rod assembly structure

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTION ON EIECTRON DEVICES=1977 *
PROCEEDINGS OF THIRTEENTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE=1978M6D5-8 *
RCA ENGINEERING=1979 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63275188A (en) * 1987-05-07 1988-11-11 Fuji Electric Co Ltd Photovoltaic device
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells

Also Published As

Publication number Publication date
JPS6115598B2 (en) 1986-04-24

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