JPS568883A - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JPS568883A JPS568883A JP8469079A JP8469079A JPS568883A JP S568883 A JPS568883 A JP S568883A JP 8469079 A JP8469079 A JP 8469079A JP 8469079 A JP8469079 A JP 8469079A JP S568883 A JPS568883 A JP S568883A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- around
- layers
- amorphous
- photovoltaic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Transform (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To heighten the energy conversion efficiency by adding an N-type amorphous Si layer to an amorphous Si solar cell composing of p-i-n structure wherein the output voltage is raised. CONSTITUTION:A clear electrode film 12 is adhered by successively stacking n-i-p type and additional N-type amorphous Si layers 8-11 on a metal substrate 7. The Si layers 8-11 are obtained by glow discharge decomposition method and the thickness of each film is as follows: The layer 8 is around 20-500Angstrom . The layer 9 is around 3,000-20,000Angstrom . The layer 10 is around 50-300Angstrom . The layer 11 is around 200-500Angstrom . This structure remarkably improve various characteristics as photovoltaic element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8469079A JPS568883A (en) | 1979-07-04 | 1979-07-04 | Photovoltaic element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8469079A JPS568883A (en) | 1979-07-04 | 1979-07-04 | Photovoltaic element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568883A true JPS568883A (en) | 1981-01-29 |
JPS6115598B2 JPS6115598B2 (en) | 1986-04-24 |
Family
ID=13837659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8469079A Granted JPS568883A (en) | 1979-07-04 | 1979-07-04 | Photovoltaic element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568883A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63275188A (en) * | 1987-05-07 | 1988-11-11 | Fuji Electric Co Ltd | Photovoltaic device |
US5055141A (en) * | 1990-01-19 | 1991-10-08 | Solarex Corporation | Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6144596U (en) * | 1984-08-27 | 1986-03-24 | 動力炉・核燃料開発事業団 | Control rod assembly structure |
-
1979
- 1979-07-04 JP JP8469079A patent/JPS568883A/en active Granted
Non-Patent Citations (3)
Title |
---|
IEEE TRANSACTION ON EIECTRON DEVICES=1977 * |
PROCEEDINGS OF THIRTEENTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE=1978M6D5-8 * |
RCA ENGINEERING=1979 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63275188A (en) * | 1987-05-07 | 1988-11-11 | Fuji Electric Co Ltd | Photovoltaic device |
US5055141A (en) * | 1990-01-19 | 1991-10-08 | Solarex Corporation | Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells |
Also Published As
Publication number | Publication date |
---|---|
JPS6115598B2 (en) | 1986-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55125680A (en) | Photovoltaic element | |
DE2964526D1 (en) | Process for manufacturing a thin-film cds/cdte photovoltaic cell having enhanced conversion efficiency and photovoltaic cell produced by this process | |
JPS5752176A (en) | Semiconductor device | |
CN101118914A (en) | Solar cell and manufacturing method | |
JPS5749278A (en) | Amorphous silicone solar cell | |
JPS57153478A (en) | Photoelectric conversion device | |
US5853498A (en) | Thin film solar cell | |
JPS568883A (en) | Photovoltaic element | |
JPS57136377A (en) | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element | |
JPS5963774A (en) | Thin-film silicon solar cell | |
JPS6225275B2 (en) | ||
JPS558092A (en) | Fine film solar cell and its production method | |
JPS55157276A (en) | Amorphous thin film solar battery | |
JPS56114383A (en) | Solar energy converter | |
JPS571262A (en) | Solar cell | |
JPS571265A (en) | Solar cell | |
JPS5669871A (en) | Sunray generating device | |
JPS5745980A (en) | Amorphous solar battery and manufacture thereof | |
JPS6459966A (en) | Laminated multilayer amorphous solar cell | |
JPH0586677B2 (en) | ||
JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
JPS57107081A (en) | Photoelectromotive element | |
JPS5643775A (en) | Production of solar battery | |
JPS55124274A (en) | Solar battery | |
JPS5568681A (en) | Amorphous silicon solar battery and fabricating the same |