JPS5749278A - Amorphous silicone solar cell - Google Patents

Amorphous silicone solar cell

Info

Publication number
JPS5749278A
JPS5749278A JP55125716A JP12571680A JPS5749278A JP S5749278 A JPS5749278 A JP S5749278A JP 55125716 A JP55125716 A JP 55125716A JP 12571680 A JP12571680 A JP 12571680A JP S5749278 A JPS5749278 A JP S5749278A
Authority
JP
Japan
Prior art keywords
layer
amorphous
solar cell
film
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55125716A
Other languages
Japanese (ja)
Inventor
Michio Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55125716A priority Critical patent/JPS5749278A/en
Publication of JPS5749278A publication Critical patent/JPS5749278A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the light absorption factor thereby to achieve higher photoelectric conversion efficiency of amorphous silicone solar cell by constructing the same in such a method as having the steps of forming convexities and concavities of small height in a grid-like manner on a glass surface and then successively forming an ITO transparent electrode film, an amorphous Si film and a metallic electrode layer. CONSTITUTION:A transparent glass substrate 4a is formed to have on the surface thereof a series of shallow periodical diffraction grid. An ITO transparent electrode film 5 is formed on the substrate surface by evaporation method. Then, a P layer 6 of amorphous Si, an i layer 7 and an N layer 8 are successively formed by a glow discharge decomposition of SiH4. These layers have the form of grid constituted by convexities and concavities conforming with those on the glass surface. According to this arrangement, the incident light L is effectively adsorbed by the amorphous Si layer through multi-reflection and refraction, so that the photoelectric conversion efficiency can be improved. Finally, an Al film 9 is formed to complete the solar cell.
JP55125716A 1980-09-08 1980-09-08 Amorphous silicone solar cell Pending JPS5749278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125716A JPS5749278A (en) 1980-09-08 1980-09-08 Amorphous silicone solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125716A JPS5749278A (en) 1980-09-08 1980-09-08 Amorphous silicone solar cell

Publications (1)

Publication Number Publication Date
JPS5749278A true JPS5749278A (en) 1982-03-23

Family

ID=14916975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125716A Pending JPS5749278A (en) 1980-09-08 1980-09-08 Amorphous silicone solar cell

Country Status (1)

Country Link
JP (1) JPS5749278A (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318852A1 (en) * 1982-09-27 1984-03-29 RCA Corp., 10020 New York, N.Y. PHOTODETECTOR
JPS59104185A (en) * 1982-11-22 1984-06-15 エクソン・リサ−チ・アンド・エンジニアリング・カンパニ− Photovoltaic semiconductor device spaced with reflector
JPS59108376A (en) * 1982-11-30 1984-06-22 ウエスターン エレクトリック カムパニー,インコーポレーテッド Photodetector
JPS59123279A (en) * 1982-12-28 1984-07-17 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
JPS59127879A (en) * 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd Photoelectric conversion device and manufacture thereof
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
DE3431603A1 (en) * 1983-08-29 1985-03-14 Taiyo Yuden K. K. PHOTOELECTRIC CONVERTER
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPS60158678A (en) * 1983-12-23 1985-08-20 ユニサーチ リミテツド Solar battery and method of producing same
JPS60151157U (en) * 1984-03-19 1985-10-07 鐘淵化学工業株式会社 solar cells
JPS60170433U (en) * 1984-04-20 1985-11-12 三洋電機株式会社 Roof tiles with solar cells
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4568791A (en) * 1982-12-04 1986-02-04 501 Hoya Corporation Solar cell comprising an undulated transparent conductive layer
US4599482A (en) * 1983-03-07 1986-07-08 Semiconductor Energy Lab. Co., Ltd. Semiconductor photoelectric conversion device and method of making the same
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
FR2596753A1 (en) * 1986-04-08 1987-10-09 Glaverbel MATE GLASS, MATE GLASS MANUFACTURING METHOD, PHOTOVOLTAIC CELL COMPRISING SUCH A GLASS, AND METHOD OF MANUFACTURING SUCH A CELL
JPH02164077A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous silicon solar cell
JPH0362577A (en) * 1990-07-24 1991-03-18 Sanyo Electric Co Ltd Manufacture of solar battery apparatus
EP2327103A2 (en) * 2008-09-03 2011-06-01 Moser Baer Photo Voltaic Ltd. Method for producing a light trapping layer on a transparent substrate for use in a photovoltaic device, a method for producing a photovoltaic device as well as such a photovoltaic device
JP2012004497A (en) * 2010-06-21 2012-01-05 Toshiba Corp Thin film solar cell and method for manufacturing the same
EP2372777A3 (en) * 2007-04-26 2012-05-30 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
CN111446373A (en) * 2020-03-20 2020-07-24 杭州电子科技大学 Zigzag ITO transparent electrode and organic solar cell

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
FR2533755A1 (en) * 1982-09-27 1984-03-30 Rca Corp PHOTODETECTOR AND MANUFACTURING METHOD THEREOF
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
DE3318852A1 (en) * 1982-09-27 1984-03-29 RCA Corp., 10020 New York, N.Y. PHOTODETECTOR
JPS59104185A (en) * 1982-11-22 1984-06-15 エクソン・リサ−チ・アンド・エンジニアリング・カンパニ− Photovoltaic semiconductor device spaced with reflector
JPS59108376A (en) * 1982-11-30 1984-06-22 ウエスターン エレクトリック カムパニー,インコーポレーテッド Photodetector
US4568791A (en) * 1982-12-04 1986-02-04 501 Hoya Corporation Solar cell comprising an undulated transparent conductive layer
JPS59123279A (en) * 1982-12-28 1984-07-17 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
JPS59127879A (en) * 1983-01-12 1984-07-23 Semiconductor Energy Lab Co Ltd Photoelectric conversion device and manufacture thereof
US4599482A (en) * 1983-03-07 1986-07-08 Semiconductor Energy Lab. Co., Ltd. Semiconductor photoelectric conversion device and method of making the same
JPS6049679A (en) * 1983-08-29 1985-03-18 Agency Of Ind Science & Technol Photoelectric conversion element, optical path thereof is extended
DE3431603A1 (en) * 1983-08-29 1985-03-14 Taiyo Yuden K. K. PHOTOELECTRIC CONVERTER
US4644091A (en) * 1983-08-29 1987-02-17 Taiyo Yuden Kabushiki Kaisha Photoelectric transducer
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPS60158678A (en) * 1983-12-23 1985-08-20 ユニサーチ リミテツド Solar battery and method of producing same
JPH0837318A (en) * 1983-12-23 1996-02-06 Unisearch Ltd Laser grooved solar cell
JPS60151157U (en) * 1984-03-19 1985-10-07 鐘淵化学工業株式会社 solar cells
JPS60170433U (en) * 1984-04-20 1985-11-12 三洋電機株式会社 Roof tiles with solar cells
BE1001108A4 (en) * 1986-04-08 1989-07-18 Glaverbel Matt glass, method of manufacturing glass mate, photovoltaic cell including such glass and method for making such a cell.
FR2596753A1 (en) * 1986-04-08 1987-10-09 Glaverbel MATE GLASS, MATE GLASS MANUFACTURING METHOD, PHOTOVOLTAIC CELL COMPRISING SUCH A GLASS, AND METHOD OF MANUFACTURING SUCH A CELL
JPH02164077A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous silicon solar cell
JPH0583199B2 (en) * 1988-12-19 1993-11-25 Hitachi Ltd
JPH0362577A (en) * 1990-07-24 1991-03-18 Sanyo Electric Co Ltd Manufacture of solar battery apparatus
EP2372777A3 (en) * 2007-04-26 2012-05-30 Guardian Industries Corp. Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
EP2327103A2 (en) * 2008-09-03 2011-06-01 Moser Baer Photo Voltaic Ltd. Method for producing a light trapping layer on a transparent substrate for use in a photovoltaic device, a method for producing a photovoltaic device as well as such a photovoltaic device
JP2012004497A (en) * 2010-06-21 2012-01-05 Toshiba Corp Thin film solar cell and method for manufacturing the same
CN111446373A (en) * 2020-03-20 2020-07-24 杭州电子科技大学 Zigzag ITO transparent electrode and organic solar cell

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