JPS56138960A - Amorphous thin film solar battery - Google Patents

Amorphous thin film solar battery

Info

Publication number
JPS56138960A
JPS56138960A JP4235280A JP4235280A JPS56138960A JP S56138960 A JPS56138960 A JP S56138960A JP 4235280 A JP4235280 A JP 4235280A JP 4235280 A JP4235280 A JP 4235280A JP S56138960 A JPS56138960 A JP S56138960A
Authority
JP
Japan
Prior art keywords
substrate
grid electrode
respect
thin film
solar battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4235280A
Other languages
Japanese (ja)
Inventor
Katsumi Imaizumi
Manabu Ito
Yutaka Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4235280A priority Critical patent/JPS56138960A/en
Publication of JPS56138960A publication Critical patent/JPS56138960A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To smooth the section of a grid electrode at the light receiving surface side with respect to a semiconductor layer by forming the edge of the lattice of the grid electrode interposed between a substrate and a transparent conductive film at an angle less than 45 deg. with respect to the substrate. CONSTITUTION:The grid electrode 12 is formed on the substrate 11, and both the side surfaces 12b of the respective lattices 12a of the grid electrode 12 are formed at an angle theta lower than 45 deg. with respect to the semiconductor side surfaces of a glass substrate 11. A transparent conductive film 13 and amorphous photoelectric converting semiconductor layer 14 are sequentially formed thereon. Electric power is produced from the electrode 15 on the layer 14. Since the edge 12b of the grid is thus formed smoothly, the respective amorphous semiconductor layers 14a-14c can be formed in a uniform thickness even on the oblique surface 12c, and the electric characteristics can be stabilized.
JP4235280A 1980-03-31 1980-03-31 Amorphous thin film solar battery Pending JPS56138960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4235280A JPS56138960A (en) 1980-03-31 1980-03-31 Amorphous thin film solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4235280A JPS56138960A (en) 1980-03-31 1980-03-31 Amorphous thin film solar battery

Publications (1)

Publication Number Publication Date
JPS56138960A true JPS56138960A (en) 1981-10-29

Family

ID=12633633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4235280A Pending JPS56138960A (en) 1980-03-31 1980-03-31 Amorphous thin film solar battery

Country Status (1)

Country Link
JP (1) JPS56138960A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234575A (en) * 1985-04-10 1986-10-18 Mitsubishi Electric Corp Amorphous solar battery

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234575A (en) * 1985-04-10 1986-10-18 Mitsubishi Electric Corp Amorphous solar battery

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