JPS56130977A - Solar battery - Google Patents

Solar battery

Info

Publication number
JPS56130977A
JPS56130977A JP3447480A JP3447480A JPS56130977A JP S56130977 A JPS56130977 A JP S56130977A JP 3447480 A JP3447480 A JP 3447480A JP 3447480 A JP3447480 A JP 3447480A JP S56130977 A JPS56130977 A JP S56130977A
Authority
JP
Japan
Prior art keywords
light receiving
transparent conductive
film
current collector
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3447480A
Other languages
Japanese (ja)
Inventor
Masaru Yamano
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3447480A priority Critical patent/JPS56130977A/en
Publication of JPS56130977A publication Critical patent/JPS56130977A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To efficiently recover electrons or holes produced in an amorphous silicon layer via a transparent conductive film at the time of emitting a light by forming a light receiving surface electrode of the transparent conductive film and a current collector. CONSTITUTION:A light receiving electrode 2 is formed of a transparent conductive film 6 and a current collector 7. Electrons or holes produced in an amorphous silicon layer 3 are received by the film 6 making contact with the entire surface of the layer 3, and an actually flowing current flows through the conductive current collector 7. The film 6 has high resistance but the substantial surface resistance value of the light receiving surface electrode 2 becomes small due to the existence of the collector 7, with the result that the internal resistance in the battery becomes small. Consequently, the power loss can be reduced.
JP3447480A 1980-03-17 1980-03-17 Solar battery Pending JPS56130977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3447480A JPS56130977A (en) 1980-03-17 1980-03-17 Solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3447480A JPS56130977A (en) 1980-03-17 1980-03-17 Solar battery

Publications (1)

Publication Number Publication Date
JPS56130977A true JPS56130977A (en) 1981-10-14

Family

ID=12415242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3447480A Pending JPS56130977A (en) 1980-03-17 1980-03-17 Solar battery

Country Status (1)

Country Link
JP (1) JPS56130977A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173982A (en) * 1981-04-21 1982-10-26 Fuji Electric Corp Res & Dev Ltd Solar battery module
JPS58194379A (en) * 1982-02-11 1983-11-12 エナ−ジ−・コンバ−ション・デバイセス・インコ−ポレ−テッド Semiconductor device and method of producing same
JPS59115572A (en) * 1982-12-23 1984-07-04 Toshiba Corp Photovoltaic device
JPH02164078A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173982A (en) * 1981-04-21 1982-10-26 Fuji Electric Corp Res & Dev Ltd Solar battery module
JPS58194379A (en) * 1982-02-11 1983-11-12 エナ−ジ−・コンバ−ション・デバイセス・インコ−ポレ−テッド Semiconductor device and method of producing same
JPH0413869B2 (en) * 1982-02-11 1992-03-11 Enaajii Konbaajon Debaisesu Inc
JPS59115572A (en) * 1982-12-23 1984-07-04 Toshiba Corp Photovoltaic device
JPH02164078A (en) * 1988-12-19 1990-06-25 Hitachi Ltd Amorphous solar cell

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