JPS571265A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS571265A
JPS571265A JP7384980A JP7384980A JPS571265A JP S571265 A JPS571265 A JP S571265A JP 7384980 A JP7384980 A JP 7384980A JP 7384980 A JP7384980 A JP 7384980A JP S571265 A JPS571265 A JP S571265A
Authority
JP
Japan
Prior art keywords
layers
electrodes
constitution
sides
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7384980A
Other languages
Japanese (ja)
Inventor
Kazumi Maruyama
Masahide Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP7384980A priority Critical patent/JPS571265A/en
Publication of JPS571265A publication Critical patent/JPS571265A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To effectively utilize the incident light on both surfaces by providing semiconductors having P-N junctions or Schottky barriers and output electrodes on both sides of a substrate whose both surfaces indicate conductive porperty. CONSTITUTION:On both sides of a stainless steel plate 1, N layers 2, I layers 3, and P layers 4 are layered by the aid of amorphous Si. The layers are formed in a sequential process by changing the gas supply. Transparent electrodes 5 are deposited or the entire surfaces of the layers 4, and comb-shaped current collecting electrodes 6 are provided. By the incidence of the solar light 7, a voltage is generated between the substrate 1 and both electrodes 6. In this constitution, the output can be increased or the required area can be reduced.
JP7384980A 1980-06-02 1980-06-02 Solar cell Pending JPS571265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7384980A JPS571265A (en) 1980-06-02 1980-06-02 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7384980A JPS571265A (en) 1980-06-02 1980-06-02 Solar cell

Publications (1)

Publication Number Publication Date
JPS571265A true JPS571265A (en) 1982-01-06

Family

ID=13529998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7384980A Pending JPS571265A (en) 1980-06-02 1980-06-02 Solar cell

Country Status (1)

Country Link
JP (1) JPS571265A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184374U (en) * 1981-05-18 1982-11-22
JPS59126679A (en) * 1983-01-10 1984-07-21 Agency Of Ind Science & Technol Solar battery
JPS6293982A (en) * 1985-10-11 1987-04-30 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Optical filter generating electric power
US5206523A (en) * 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
US6369405B1 (en) * 1989-12-07 2002-04-09 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Silicon quantum wires
JP2022182917A (en) * 2021-05-26 2022-12-08 浩二 尊田 Field-effect solar cells of double-sided light-receiving type

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184374U (en) * 1981-05-18 1982-11-22
JPS59126679A (en) * 1983-01-10 1984-07-21 Agency Of Ind Science & Technol Solar battery
JPS6293982A (en) * 1985-10-11 1987-04-30 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Optical filter generating electric power
US6369405B1 (en) * 1989-12-07 2002-04-09 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Silicon quantum wires
US5206523A (en) * 1991-08-29 1993-04-27 Goesele Ulrich M Microporous crystalline silicon of increased band-gap for semiconductor applications
JP2022182917A (en) * 2021-05-26 2022-12-08 浩二 尊田 Field-effect solar cells of double-sided light-receiving type

Similar Documents

Publication Publication Date Title
ES8202987A1 (en) Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface
JPS5749278A (en) Amorphous silicone solar cell
JPS5771188A (en) Amorphous solar cell
JPS6477973A (en) Photovoltaic device
JPS571265A (en) Solar cell
JPS55107276A (en) Photoelectromotive force device
JPS57204178A (en) Optoelectric transducer
JPS57187971A (en) Solar cell
JPS5685875A (en) Solar battery
FR2443746A1 (en) Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80)
JPS55111180A (en) Thin-film solar battery of high output voltage
JPS5963774A (en) Thin-film silicon solar cell
JPS57187975A (en) Photoelectric converter
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS5669873A (en) Manufacture of solar cell
JPS5669871A (en) Sunray generating device
JPS6476777A (en) Light transmitting type solar cell
JPS56114384A (en) Solar battery
JPS56148874A (en) Semiconductor photoelectric converter
JPS57114290A (en) Amorphous thin film solar battery
JPS56130977A (en) Solar battery
JPS6441278A (en) Manufacture of thin film photovoltaic element
JPS5632774A (en) Thin film type photovoltaic element and manufacture thereof
JPS57122580A (en) Solar battery
JPS5658280A (en) Solar cell