FR2443746A1 - Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80) - Google Patents

Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80)

Info

Publication number
FR2443746A1
FR2443746A1 FR7930098A FR7930098A FR2443746A1 FR 2443746 A1 FR2443746 A1 FR 2443746A1 FR 7930098 A FR7930098 A FR 7930098A FR 7930098 A FR7930098 A FR 7930098A FR 2443746 A1 FR2443746 A1 FR 2443746A1
Authority
FR
France
Prior art keywords
work function
photocell
solar cell
esp
low work
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7930098A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of FR2443746A1 publication Critical patent/FR2443746A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Photocell has a transparent substrate with a transparent electrode coating of conductive oxide (I) with a work function of under 4.5 eV; a continuous crystalline, 1-5(2-3) mu m thick layer of p-Se, which forms a heterojunction in contact with (I); a thin Te layer forming a metallurgical bond between the (I) and Se layers; and an electrode of a metal with a work function of over 5.0 eV which is adjacent to the Se layer with a depletion zone extending inwards for >100 nm. from the heterojunction and with an O deficiency w.r.t. the Se at the ohmic contact. When exposed to solar or equiv. energy in an intensity of ca. 100mW/cm2, the energy conversion efficiency is >3.5%. Cell is used esp. as solar cell. Economical conversion of solar energy into electrical energy with good efficiency is possible.
FR7930098A 1978-12-08 1979-12-07 Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80) Withdrawn FR2443746A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96762678A 1978-12-08 1978-12-08

Publications (1)

Publication Number Publication Date
FR2443746A1 true FR2443746A1 (en) 1980-07-04

Family

ID=25513073

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7930098A Withdrawn FR2443746A1 (en) 1978-12-08 1979-12-07 Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80)

Country Status (4)

Country Link
JP (1) JPS5580369A (en)
DE (1) DE2949359A1 (en)
FR (1) FR2443746A1 (en)
NL (1) NL7908885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109994A1 (en) * 1982-10-15 1984-06-13 Jean Orsini Method of creating a contact configuration on a semiconductor device and its application to photovoltaic selenium solar cells
EP0217095A2 (en) * 1985-09-03 1987-04-08 Siemens Aktiengesellschaft Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998562A (en) * 1982-11-27 1984-06-06 Matsushita Electric Ind Co Ltd Photoelectric conversion element
JP2007273491A (en) * 2006-03-08 2007-10-18 Hokkaido Univ Photoelectric conversion element, fibrous structure, textile, fabric, and wallpaper material
JP5984425B2 (en) * 2012-02-28 2016-09-06 大阪瓦斯株式会社 Photoelectric conversion device that can be easily manufactured
JP6362257B2 (en) * 2013-06-13 2018-07-25 日本放送協会 PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, LAMINATED SOLID IMAGE PICKUP ELEMENT, AND SOLAR CELL
JP6570173B2 (en) * 2015-07-01 2019-09-04 日本放送協会 Photoelectric conversion element, method for manufacturing photoelectric conversion element, solid-state imaging element
JP6575997B2 (en) * 2015-07-30 2019-09-18 日本放送協会 Photoelectric conversion element, method for manufacturing photoelectric conversion element, solid-state imaging element
JP6937189B2 (en) * 2017-08-21 2021-09-22 日本放送協会 Manufacturing method of photoelectric conversion element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990095A (en) * 1975-09-15 1976-11-02 Rca Corporation Selenium rectifier having hexagonal polycrystalline selenium layer
US4064522A (en) * 1976-02-04 1977-12-20 Exxon Research & Engineering Co. High efficiency selenium heterojunction solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990095A (en) * 1975-09-15 1976-11-02 Rca Corporation Selenium rectifier having hexagonal polycrystalline selenium layer
US4064522A (en) * 1976-02-04 1977-12-20 Exxon Research & Engineering Co. High efficiency selenium heterojunction solar cells

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109994A1 (en) * 1982-10-15 1984-06-13 Jean Orsini Method of creating a contact configuration on a semiconductor device and its application to photovoltaic selenium solar cells
EP0217095A2 (en) * 1985-09-03 1987-04-08 Siemens Aktiengesellschaft Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers
EP0217095A3 (en) * 1985-09-03 1989-03-29 Siemens Aktiengesellschaft Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers

Also Published As

Publication number Publication date
JPS5580369A (en) 1980-06-17
NL7908885A (en) 1980-06-10
DE2949359A1 (en) 1980-06-19

Similar Documents

Publication Publication Date Title
AU590803B2 (en) Solar cell
ATE44334T1 (en) METHOD AND DEVICE FOR THE MANUFACTURE OF THIN-FILM SOLAR CELLS WITH HETEROJUNCTIONS FROM I-III-VI2 CHALCOPYRITE COMPOUNDS AND SOLAR CELLS MANUFACTURED BY THIS METHOD.
EP1052703A3 (en) Thin film Ib/IIIa/VIa compound semiconductor solar cell and method of production of such solar cell
JPS5752176A (en) Semiconductor device
AU1358795A (en) Method for manufacture of a solar cell and solar cell
FR2443746A1 (en) Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80)
DE3688857D1 (en) SOLAR CELLS BASED ON CUINS2 AND METHOD FOR THE PRODUCTION THEREOF.
JPS6154276B2 (en)
JPS56100486A (en) Photoelectric conversion element
JPS571265A (en) Solar cell
ES8404570A1 (en) Cadmium sulphide solar cells.
JPS5745980A (en) Amorphous solar battery and manufacture thereof
US4559282A (en) Stable N-CuInSe2 /iodide-iodine photoelectrochemical cell
JPS5745288A (en) Thin film photo diode
JPS56130977A (en) Solar battery
JPS5797685A (en) Semiconductor photovoltaic element
JPS54105993A (en) Solar battery
JPS551133A (en) Photoelectric conversion semiconductor
JPS51123590A (en) Manufacturing method of thin film type solar battery
JPS57136378A (en) Manufacture of semiconductor device for photovoltaic generator
JPS57139974A (en) Semiconductor opticoelectric convertor
JPS5615086A (en) Photoelectric converting device
JPS5568681A (en) Amorphous silicon solar battery and fabricating the same
JPS57128083A (en) Photoelectric converting device
JPS5210686A (en) Sun cell for clock

Legal Events

Date Code Title Description
ST Notification of lapse