FR2443746A1 - Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80) - Google Patents
Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80)Info
- Publication number
- FR2443746A1 FR2443746A1 FR7930098A FR7930098A FR2443746A1 FR 2443746 A1 FR2443746 A1 FR 2443746A1 FR 7930098 A FR7930098 A FR 7930098A FR 7930098 A FR7930098 A FR 7930098A FR 2443746 A1 FR2443746 A1 FR 2443746A1
- Authority
- FR
- France
- Prior art keywords
- work function
- photocell
- solar cell
- esp
- low work
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title 1
- 229910052711 selenium Inorganic materials 0.000 title 1
- 239000011669 selenium Substances 0.000 title 1
- 229910052714 tellurium Inorganic materials 0.000 title 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Photocell has a transparent substrate with a transparent electrode coating of conductive oxide (I) with a work function of under 4.5 eV; a continuous crystalline, 1-5(2-3) mu m thick layer of p-Se, which forms a heterojunction in contact with (I); a thin Te layer forming a metallurgical bond between the (I) and Se layers; and an electrode of a metal with a work function of over 5.0 eV which is adjacent to the Se layer with a depletion zone extending inwards for >100 nm. from the heterojunction and with an O deficiency w.r.t. the Se at the ohmic contact. When exposed to solar or equiv. energy in an intensity of ca. 100mW/cm2, the energy conversion efficiency is >3.5%. Cell is used esp. as solar cell. Economical conversion of solar energy into electrical energy with good efficiency is possible.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96762678A | 1978-12-08 | 1978-12-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2443746A1 true FR2443746A1 (en) | 1980-07-04 |
Family
ID=25513073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7930098A Withdrawn FR2443746A1 (en) | 1978-12-08 | 1979-12-07 | Photocell, esp. solar cell giving efficient conversion - has transparent oxide electrode with low work function and selenium layer bonded by tellurium film (NL 10.6.80) |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5580369A (en) |
DE (1) | DE2949359A1 (en) |
FR (1) | FR2443746A1 (en) |
NL (1) | NL7908885A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0109994A1 (en) * | 1982-10-15 | 1984-06-13 | Jean Orsini | Method of creating a contact configuration on a semiconductor device and its application to photovoltaic selenium solar cells |
EP0217095A2 (en) * | 1985-09-03 | 1987-04-08 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5998562A (en) * | 1982-11-27 | 1984-06-06 | Matsushita Electric Ind Co Ltd | Photoelectric conversion element |
JP2007273491A (en) * | 2006-03-08 | 2007-10-18 | Hokkaido Univ | Photoelectric conversion element, fibrous structure, textile, fabric, and wallpaper material |
JP5984425B2 (en) * | 2012-02-28 | 2016-09-06 | 大阪瓦斯株式会社 | Photoelectric conversion device that can be easily manufactured |
JP6362257B2 (en) * | 2013-06-13 | 2018-07-25 | 日本放送協会 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, LAMINATED SOLID IMAGE PICKUP ELEMENT, AND SOLAR CELL |
JP6570173B2 (en) * | 2015-07-01 | 2019-09-04 | 日本放送協会 | Photoelectric conversion element, method for manufacturing photoelectric conversion element, solid-state imaging element |
JP6575997B2 (en) * | 2015-07-30 | 2019-09-18 | 日本放送協会 | Photoelectric conversion element, method for manufacturing photoelectric conversion element, solid-state imaging element |
JP6937189B2 (en) * | 2017-08-21 | 2021-09-22 | 日本放送協会 | Manufacturing method of photoelectric conversion element |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3990095A (en) * | 1975-09-15 | 1976-11-02 | Rca Corporation | Selenium rectifier having hexagonal polycrystalline selenium layer |
US4064522A (en) * | 1976-02-04 | 1977-12-20 | Exxon Research & Engineering Co. | High efficiency selenium heterojunction solar cells |
-
1979
- 1979-12-07 DE DE19792949359 patent/DE2949359A1/en not_active Withdrawn
- 1979-12-07 FR FR7930098A patent/FR2443746A1/en not_active Withdrawn
- 1979-12-08 JP JP15874479A patent/JPS5580369A/en active Pending
- 1979-12-10 NL NL7908885A patent/NL7908885A/en not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3990095A (en) * | 1975-09-15 | 1976-11-02 | Rca Corporation | Selenium rectifier having hexagonal polycrystalline selenium layer |
US4064522A (en) * | 1976-02-04 | 1977-12-20 | Exxon Research & Engineering Co. | High efficiency selenium heterojunction solar cells |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0109994A1 (en) * | 1982-10-15 | 1984-06-13 | Jean Orsini | Method of creating a contact configuration on a semiconductor device and its application to photovoltaic selenium solar cells |
EP0217095A2 (en) * | 1985-09-03 | 1987-04-08 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
EP0217095A3 (en) * | 1985-09-03 | 1989-03-29 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
Also Published As
Publication number | Publication date |
---|---|
NL7908885A (en) | 1980-06-10 |
DE2949359A1 (en) | 1980-06-19 |
JPS5580369A (en) | 1980-06-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |