JPS551133A - Photoelectric conversion semiconductor - Google Patents

Photoelectric conversion semiconductor

Info

Publication number
JPS551133A
JPS551133A JP7394278A JP7394278A JPS551133A JP S551133 A JPS551133 A JP S551133A JP 7394278 A JP7394278 A JP 7394278A JP 7394278 A JP7394278 A JP 7394278A JP S551133 A JPS551133 A JP S551133A
Authority
JP
Japan
Prior art keywords
film
substrate
photoelectric conversion
thickness
conversion efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7394278A
Other languages
Japanese (ja)
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7394278A priority Critical patent/JPS551133A/en
Publication of JPS551133A publication Critical patent/JPS551133A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To raise photoelectric conversion efficiency by forming Si3N4 film through directly nitriding an Si substrate, and by providing transparent electrodes.
CONSTITUTION: When an n-thpe Si substrate 11 is immersed in 1,000°C NH3 for treatment for one hour, Si3N4 thin film 12 is formed on the surface thereof. Said film 12 is very uniform in thickness since the rate of increase in thickness at about 30Å is determined An about by the diffusion of N on the formation thereof. 100Å Au electrole 13 and an Au-Sb alloy electrod 14 are attached to said film 12. The energy of light 15 is absorbed by said substrate 11, and excited positive hole electrons transfer to said electrodes 14 and 13 so that electromotive force is generated. The positive holes passing through said film 12 at this time easily reach said electrode 13 since the obstacle being in the way thereof to said substrate 11 is small, and do not recombine with each other at the interface between said film 12 and substrate 11 so that this photoelectric conversion semiconductor system is higher than the conventional ones of the kind in photoelectric conversion efficiency. The thin film of the material made by replacing O with N through letting NH3 work on SiO2 cam be ised in place of the film by direct nitrification.
COPYRIGHT: (C)1980,JPO&Japio
JP7394278A 1978-06-19 1978-06-19 Photoelectric conversion semiconductor Pending JPS551133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7394278A JPS551133A (en) 1978-06-19 1978-06-19 Photoelectric conversion semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7394278A JPS551133A (en) 1978-06-19 1978-06-19 Photoelectric conversion semiconductor

Publications (1)

Publication Number Publication Date
JPS551133A true JPS551133A (en) 1980-01-07

Family

ID=13532661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7394278A Pending JPS551133A (en) 1978-06-19 1978-06-19 Photoelectric conversion semiconductor

Country Status (1)

Country Link
JP (1) JPS551133A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361718A (en) * 1980-12-19 1982-11-30 E. I. Du Pont De Nemours And Company Silicon solar cell N-region metallizations comprising a nickel-antimony alloy
JPS6218044A (en) * 1985-07-17 1987-01-27 Fuji Electric Co Ltd Formation of nitride film on semiconductor substrate
JPH02500397A (en) * 1987-07-07 1990-02-08 モービル・ソラー・エナージー・コーポレーション Method for manufacturing solar cells with antireflection coating

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893285A (en) * 1972-03-10 1973-12-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4893285A (en) * 1972-03-10 1973-12-03

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361718A (en) * 1980-12-19 1982-11-30 E. I. Du Pont De Nemours And Company Silicon solar cell N-region metallizations comprising a nickel-antimony alloy
JPS6218044A (en) * 1985-07-17 1987-01-27 Fuji Electric Co Ltd Formation of nitride film on semiconductor substrate
JPH02500397A (en) * 1987-07-07 1990-02-08 モービル・ソラー・エナージー・コーポレーション Method for manufacturing solar cells with antireflection coating

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