JPS57178380A - Manufacture of mis type photoelectric transducer - Google Patents

Manufacture of mis type photoelectric transducer

Info

Publication number
JPS57178380A
JPS57178380A JP56064485A JP6448581A JPS57178380A JP S57178380 A JPS57178380 A JP S57178380A JP 56064485 A JP56064485 A JP 56064485A JP 6448581 A JP6448581 A JP 6448581A JP S57178380 A JPS57178380 A JP S57178380A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
nitride film
electrode
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56064485A
Other languages
Japanese (ja)
Other versions
JPS622468B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP56064485A priority Critical patent/JPS57178380A/en
Publication of JPS57178380A publication Critical patent/JPS57178380A/en
Publication of JPS622468B2 publication Critical patent/JPS622468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent the reaction of an electrode material and a semiconductor material, and to improve reliability by forming a silicon nitride film, a reflection preventive film and an opposite electrode, which is shaped selectively, onto a semiconductor substrate in integral structure. CONSTITUTION:The P type silicon substrate 1 is thermally nitrified in ammonia, and the silicon nitride film 5 is formed. The reflection preventive film 6 is shaped onto the film 5, a resist film 7 is further applied, and the resists of electrode forming regions 13 are removed. The silicon nitride film 5 of the back of the substrate is removed, and the electrode 8 is formed. The reflection preventive film 6 is removed selectively using the resist film 7 as a mask, and electrodes 10 are shaped by evaporating the electrode material onto the silicon nitride film 5 exposed under vacuum. The resist film 7 is removed, and the unnecessary electrode material 10<1> is lifted off. With the silicon nitride film 5, energy band width is small, and the thickness can be thickened (20-25Angstrom ).
JP56064485A 1981-04-27 1981-04-27 Manufacture of mis type photoelectric transducer Granted JPS57178380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56064485A JPS57178380A (en) 1981-04-27 1981-04-27 Manufacture of mis type photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064485A JPS57178380A (en) 1981-04-27 1981-04-27 Manufacture of mis type photoelectric transducer

Publications (2)

Publication Number Publication Date
JPS57178380A true JPS57178380A (en) 1982-11-02
JPS622468B2 JPS622468B2 (en) 1987-01-20

Family

ID=13259559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064485A Granted JPS57178380A (en) 1981-04-27 1981-04-27 Manufacture of mis type photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS57178380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63501668A (en) * 1985-10-11 1988-06-23 ヌ−ケン・ゲ−・エム・ベ−・ハ− solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63501668A (en) * 1985-10-11 1988-06-23 ヌ−ケン・ゲ−・エム・ベ−・ハ− solar cells

Also Published As

Publication number Publication date
JPS622468B2 (en) 1987-01-20

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