JPS5487470A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5487470A JPS5487470A JP15581377A JP15581377A JPS5487470A JP S5487470 A JPS5487470 A JP S5487470A JP 15581377 A JP15581377 A JP 15581377A JP 15581377 A JP15581377 A JP 15581377A JP S5487470 A JPS5487470 A JP S5487470A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- layer
- substrate
- unneeded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain an electrode which is mechanically and chemically stable by stacking a Cr layer as a contact metal layer and Au thin film on a semiconductor- substrate electrode part, by providing an Ag protruding electrode on it by electrolytic plating and by removing unneeded parts of the Au thin film and Cr by etching.
CONSTITUTION: Onto N-type Si substrate 1, SiO2 film 2 is adhered and after a window is made, P-type region 4 is formed in exposed substrate 1 through diffusion. Next, film 2 generated in one is provided with window 3 for an electrode to expose one part of region 4, the Cr layer 5 and thin Au film 6 are vapor-deposited on the entire surface by being stacked. Then, reverse-surface electrode 7 is provided onto the reverse surface of substrate 1 and the unneeded part of film 6 is removed by photoetching. Next, photo resists film 8 is applied here and electrolytic plating is done over a protecting of layer 5, thereby forming Ag protruding electrode 9 in a hemisphere shape on film 6. Then' unneeded parts of film 8 and layer 5 are removed.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15581377A JPS5487470A (en) | 1977-12-24 | 1977-12-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15581377A JPS5487470A (en) | 1977-12-24 | 1977-12-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5487470A true JPS5487470A (en) | 1979-07-11 |
Family
ID=15614024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15581377A Pending JPS5487470A (en) | 1977-12-24 | 1977-12-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5487470A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688339A (en) * | 1979-12-21 | 1981-07-17 | Hitachi Ltd | Dhd-sealed semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919631A (en) * | 1972-06-14 | 1974-02-21 | ||
US3809625A (en) * | 1972-08-15 | 1974-05-07 | Gen Motors Corp | Method of making contact bumps on flip-chips |
-
1977
- 1977-12-24 JP JP15581377A patent/JPS5487470A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4919631A (en) * | 1972-06-14 | 1974-02-21 | ||
US3809625A (en) * | 1972-08-15 | 1974-05-07 | Gen Motors Corp | Method of making contact bumps on flip-chips |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688339A (en) * | 1979-12-21 | 1981-07-17 | Hitachi Ltd | Dhd-sealed semiconductor device |
JPS6346984B2 (en) * | 1979-12-21 | 1988-09-20 | Hitachi Ltd |
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