JPS5487471A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5487471A
JPS5487471A JP15581477A JP15581477A JPS5487471A JP S5487471 A JPS5487471 A JP S5487471A JP 15581477 A JP15581477 A JP 15581477A JP 15581477 A JP15581477 A JP 15581477A JP S5487471 A JPS5487471 A JP S5487471A
Authority
JP
Japan
Prior art keywords
layer
metal
film
electrode
protruding electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15581477A
Other languages
Japanese (ja)
Other versions
JPS5950221B2 (en
Inventor
Misao Saga
Akira Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP52155814A priority Critical patent/JPS5950221B2/en
Publication of JPS5487471A publication Critical patent/JPS5487471A/en
Publication of JPS5950221B2 publication Critical patent/JPS5950221B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To evade the occurrence of side-etching at the time of the formation of a protruding electrode by forming the protruding electrode of Ag on a semiconductor substrate surface via base-meterial metal by electrolytic plating and by removing the unneeded part of the base-material metal by etching while covering the surface with metal inferior to Ag and Au.
CONSTITUTION: On N-type Si substrate 1, P-type region 4 is formed through selective diffusion and then covered with SiO2 film 2 and windwo 3 for electrode formation is made. Next, Cr layer 5 as a contact metal layer is vapor-deposited on the entire surface and after thick interposing metal layer 6 of Cu or Ni is vapor-deposited on it by being stacked, reverse-surface electrode 7 is fitted onto the reverse surface of substrate 1. Next, the unneeded part of layer 6 is removed through photoetching and photo resist film 8 is applied here for the protection of layer 5. On layer 6, Ag protruding electrode 9 is formed by electrolytic plating and metal protective film 10 of Zn and Ni inferior to Ag and Au is adhered onto the surface before the unneeded parts of film 8 and layer 5 are removed.
COPYRIGHT: (C)1979,JPO&Japio
JP52155814A 1977-12-24 1977-12-24 Manufacturing method of semiconductor device Expired JPS5950221B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52155814A JPS5950221B2 (en) 1977-12-24 1977-12-24 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52155814A JPS5950221B2 (en) 1977-12-24 1977-12-24 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5487471A true JPS5487471A (en) 1979-07-11
JPS5950221B2 JPS5950221B2 (en) 1984-12-07

Family

ID=15614048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52155814A Expired JPS5950221B2 (en) 1977-12-24 1977-12-24 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5950221B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205955A (en) * 1981-06-15 1982-12-17 Nisshin Haiboruteeji Kk Ion implanting device
JPS60253824A (en) * 1984-05-30 1985-12-14 Toshiba Corp Thermopile

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0379623U (en) * 1989-12-08 1991-08-14

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205955A (en) * 1981-06-15 1982-12-17 Nisshin Haiboruteeji Kk Ion implanting device
JPS637653B2 (en) * 1981-06-15 1988-02-17 Nitsushin Haiboruteeji Kk
JPS60253824A (en) * 1984-05-30 1985-12-14 Toshiba Corp Thermopile

Also Published As

Publication number Publication date
JPS5950221B2 (en) 1984-12-07

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