JPS5529142A - Electrode forming method for group 3-5 compound semiconductor device - Google Patents

Electrode forming method for group 3-5 compound semiconductor device

Info

Publication number
JPS5529142A
JPS5529142A JP10229178A JP10229178A JPS5529142A JP S5529142 A JPS5529142 A JP S5529142A JP 10229178 A JP10229178 A JP 10229178A JP 10229178 A JP10229178 A JP 10229178A JP S5529142 A JPS5529142 A JP S5529142A
Authority
JP
Japan
Prior art keywords
type layer
alloy
electrode
brazed
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10229178A
Other languages
Japanese (ja)
Inventor
Chiyouji Ogawa
Yasuhisa Oana
Naoyuki Hirate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10229178A priority Critical patent/JPS5529142A/en
Publication of JPS5529142A publication Critical patent/JPS5529142A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form a good and uniform ohm contact by forming the other electrode after providing a semiconductor crystal surface in such a manner that after an electrode film is formed on one side of an n type or a p type layer, it is covered with a protective film.
CONSTITUTION: If an alloy for p type layer and an alloy for an n type layer are brazed on LED of GaP by using the same device, as properties of these alloys are entirely different from each other, they adversely affect each ather. And therefore an Au-Ge alloy is vaccum brazed on the n type layer, and then, it is protected with a resist film and provided with intermediate treatment using deionized water of 25°C, and an Au-Zn alloy is brazed as an electrode for a p type layer immediately after oxfoliation of resist and cleaning with water. By using the method, it is possible to form an electrode having small variation of ohm contact resistance and good reproducibility.
COPYRIGHT: (C)1980,JPO&Japio
JP10229178A 1978-08-24 1978-08-24 Electrode forming method for group 3-5 compound semiconductor device Pending JPS5529142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10229178A JPS5529142A (en) 1978-08-24 1978-08-24 Electrode forming method for group 3-5 compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10229178A JPS5529142A (en) 1978-08-24 1978-08-24 Electrode forming method for group 3-5 compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529142A true JPS5529142A (en) 1980-03-01

Family

ID=14323497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10229178A Pending JPS5529142A (en) 1978-08-24 1978-08-24 Electrode forming method for group 3-5 compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529142A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008000015A (en) * 2006-06-20 2008-01-10 Yanmar Co Ltd Combine harvester

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008000015A (en) * 2006-06-20 2008-01-10 Yanmar Co Ltd Combine harvester

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