JPS5263068A - Formation of electrode of semiconductor device - Google Patents
Formation of electrode of semiconductor deviceInfo
- Publication number
- JPS5263068A JPS5263068A JP13911575A JP13911575A JPS5263068A JP S5263068 A JPS5263068 A JP S5263068A JP 13911575 A JP13911575 A JP 13911575A JP 13911575 A JP13911575 A JP 13911575A JP S5263068 A JPS5263068 A JP S5263068A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- formation
- semiconductor device
- layer
- alsi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make an ohmic electrode on an N+ layer by forming a thin Al film electrode on a N+Si, layer, alloying said electrode at 600°C or under, removing Al by leaving the AlSi recrystallization layer and newly providing an Al electrode.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13911575A JPS5263068A (en) | 1975-11-19 | 1975-11-19 | Formation of electrode of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13911575A JPS5263068A (en) | 1975-11-19 | 1975-11-19 | Formation of electrode of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5263068A true JPS5263068A (en) | 1977-05-25 |
Family
ID=15237830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13911575A Pending JPS5263068A (en) | 1975-11-19 | 1975-11-19 | Formation of electrode of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263068A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5429985A (en) * | 1994-01-18 | 1995-07-04 | Midwest Research Institute | Fabrication of optically reflecting ohmic contacts for semiconductor devices |
US5897331A (en) * | 1996-11-08 | 1999-04-27 | Midwest Research Institute | High efficiency low cost thin film silicon solar cell design and method for making |
JP2011029608A (en) * | 2009-06-23 | 2011-02-10 | Shindengen Electric Mfg Co Ltd | Semiconductor device, and method of manufacturing the same |
-
1975
- 1975-11-19 JP JP13911575A patent/JPS5263068A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5429985A (en) * | 1994-01-18 | 1995-07-04 | Midwest Research Institute | Fabrication of optically reflecting ohmic contacts for semiconductor devices |
US5897331A (en) * | 1996-11-08 | 1999-04-27 | Midwest Research Institute | High efficiency low cost thin film silicon solar cell design and method for making |
US6201261B1 (en) | 1996-11-08 | 2001-03-13 | Midwest Research Institute | High efficiency, low cost, thin film silicon solar cell design and method for making |
JP2011029608A (en) * | 2009-06-23 | 2011-02-10 | Shindengen Electric Mfg Co Ltd | Semiconductor device, and method of manufacturing the same |
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