JPS53148282A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53148282A JPS53148282A JP6221177A JP6221177A JPS53148282A JP S53148282 A JPS53148282 A JP S53148282A JP 6221177 A JP6221177 A JP 6221177A JP 6221177 A JP6221177 A JP 6221177A JP S53148282 A JPS53148282 A JP S53148282A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- thin films
- electrolytic corrosion
- hydrophobic thin
- prevent electrolytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent electrolytic corrosion by laminating hydrophobic thin films on Al wiring layers and Al electrode layers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6221177A JPS5949687B2 (en) | 1977-05-30 | 1977-05-30 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6221177A JPS5949687B2 (en) | 1977-05-30 | 1977-05-30 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53148282A true JPS53148282A (en) | 1978-12-23 |
JPS5949687B2 JPS5949687B2 (en) | 1984-12-04 |
Family
ID=13193568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6221177A Expired JPS5949687B2 (en) | 1977-05-30 | 1977-05-30 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5949687B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7771534B2 (en) | 1999-12-03 | 2010-08-10 | Asm International N.V. | Method of growing oxide thin films |
US7795160B2 (en) | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
US8501637B2 (en) | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
-
1977
- 1977-05-30 JP JP6221177A patent/JPS5949687B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7771534B2 (en) | 1999-12-03 | 2010-08-10 | Asm International N.V. | Method of growing oxide thin films |
US7771533B2 (en) * | 1999-12-03 | 2010-08-10 | Asm International N.V. | Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide |
US7824492B2 (en) | 1999-12-03 | 2010-11-02 | Asm International N.V. | Method of growing oxide thin films |
US9514956B2 (en) | 1999-12-03 | 2016-12-06 | Asm International N.V. | Method of growing oxide thin films |
US7795160B2 (en) | 2006-07-21 | 2010-09-14 | Asm America Inc. | ALD of metal silicate films |
US8501637B2 (en) | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
Also Published As
Publication number | Publication date |
---|---|
JPS5949687B2 (en) | 1984-12-04 |
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