JPS53148282A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53148282A
JPS53148282A JP6221177A JP6221177A JPS53148282A JP S53148282 A JPS53148282 A JP S53148282A JP 6221177 A JP6221177 A JP 6221177A JP 6221177 A JP6221177 A JP 6221177A JP S53148282 A JPS53148282 A JP S53148282A
Authority
JP
Japan
Prior art keywords
semiconductor device
thin films
electrolytic corrosion
hydrophobic thin
prevent electrolytic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6221177A
Other languages
Japanese (ja)
Other versions
JPS5949687B2 (en
Inventor
Kiichi Usuki
Shunichi Kai
Masaharu Aoyama
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6221177A priority Critical patent/JPS5949687B2/en
Publication of JPS53148282A publication Critical patent/JPS53148282A/en
Publication of JPS5949687B2 publication Critical patent/JPS5949687B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent electrolytic corrosion by laminating hydrophobic thin films on Al wiring layers and Al electrode layers.
COPYRIGHT: (C)1978,JPO&Japio
JP6221177A 1977-05-30 1977-05-30 semiconductor equipment Expired JPS5949687B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6221177A JPS5949687B2 (en) 1977-05-30 1977-05-30 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6221177A JPS5949687B2 (en) 1977-05-30 1977-05-30 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS53148282A true JPS53148282A (en) 1978-12-23
JPS5949687B2 JPS5949687B2 (en) 1984-12-04

Family

ID=13193568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6221177A Expired JPS5949687B2 (en) 1977-05-30 1977-05-30 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5949687B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7771534B2 (en) 1999-12-03 2010-08-10 Asm International N.V. Method of growing oxide thin films
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US8501637B2 (en) 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7771534B2 (en) 1999-12-03 2010-08-10 Asm International N.V. Method of growing oxide thin films
US7771533B2 (en) * 1999-12-03 2010-08-10 Asm International N.V. Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide
US7824492B2 (en) 1999-12-03 2010-11-02 Asm International N.V. Method of growing oxide thin films
US9514956B2 (en) 1999-12-03 2016-12-06 Asm International N.V. Method of growing oxide thin films
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US8501637B2 (en) 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD

Also Published As

Publication number Publication date
JPS5949687B2 (en) 1984-12-04

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