JPS53117972A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53117972A JPS53117972A JP3220077A JP3220077A JPS53117972A JP S53117972 A JPS53117972 A JP S53117972A JP 3220077 A JP3220077 A JP 3220077A JP 3220077 A JP3220077 A JP 3220077A JP S53117972 A JPS53117972 A JP S53117972A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- film
- cvdsi
- damaging
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent the damaging of underlying PSG by using a CVDSi3N4 film for the protection film of wiring layers.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3220077A JPS53117972A (en) | 1977-03-25 | 1977-03-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3220077A JPS53117972A (en) | 1977-03-25 | 1977-03-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53117972A true JPS53117972A (en) | 1978-10-14 |
Family
ID=12352257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3220077A Pending JPS53117972A (en) | 1977-03-25 | 1977-03-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53117972A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586165A (en) * | 1978-12-25 | 1980-06-28 | Hitachi Ltd | Semiconductor strain transducer |
US5057453A (en) * | 1987-10-21 | 1991-10-15 | Kabushiki Kaisha Toshiba | Method for making a semiconductor bump electrode with a skirt |
-
1977
- 1977-03-25 JP JP3220077A patent/JPS53117972A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586165A (en) * | 1978-12-25 | 1980-06-28 | Hitachi Ltd | Semiconductor strain transducer |
JPS6222470B2 (en) * | 1978-12-25 | 1987-05-18 | Hitachi Ltd | |
US5057453A (en) * | 1987-10-21 | 1991-10-15 | Kabushiki Kaisha Toshiba | Method for making a semiconductor bump electrode with a skirt |
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