JPS5391680A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5391680A
JPS5391680A JP594777A JP594777A JPS5391680A JP S5391680 A JPS5391680 A JP S5391680A JP 594777 A JP594777 A JP 594777A JP 594777 A JP594777 A JP 594777A JP S5391680 A JPS5391680 A JP S5391680A
Authority
JP
Japan
Prior art keywords
semiconductor device
conductor
epolysilicon
overlapping
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP594777A
Other languages
Japanese (ja)
Other versions
JPS583379B2 (en
Inventor
Ryoichi Hori
Kiyoo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP594777A priority Critical patent/JPS583379B2/en
Publication of JPS5391680A publication Critical patent/JPS5391680A/en
Publication of JPS583379B2 publication Critical patent/JPS583379B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To use th epolysilicon conductor more than two layers as the wiring conductor, by overlapping at a part and connecting in parallel.
COPYRIGHT: (C)1978,JPO&Japio
JP594777A 1977-01-24 1977-01-24 semiconductor equipment Expired JPS583379B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP594777A JPS583379B2 (en) 1977-01-24 1977-01-24 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP594777A JPS583379B2 (en) 1977-01-24 1977-01-24 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5391680A true JPS5391680A (en) 1978-08-11
JPS583379B2 JPS583379B2 (en) 1983-01-21

Family

ID=11625081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP594777A Expired JPS583379B2 (en) 1977-01-24 1977-01-24 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS583379B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893258A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Semiconductor device
JPS58103164A (en) * 1981-12-16 1983-06-20 Toshiba Corp Semiconductor device
JPS59158536A (en) * 1983-02-28 1984-09-08 Nec Corp Semiconductor device with multilayer interconnection
JPS59193047A (en) * 1983-04-18 1984-11-01 Seiko Epson Corp Semiconductor integrated circuit device
JPS59194448A (en) * 1983-04-18 1984-11-05 Seiko Epson Corp Semiconductor integrated circuit device
JPS61131548A (en) * 1984-11-30 1986-06-19 Mitsubishi Electric Corp Semiconductor device
US4712126A (en) * 1986-03-17 1987-12-08 Rca Corporation Low resistance tunnel
JPS63158851A (en) * 1986-12-22 1988-07-01 Nec Corp Semiconductor integrated circuit device
US6348723B1 (en) 1995-04-28 2002-02-19 Sharp Kabushiki Kaisha Semiconductor device with a dummy wire positioned to prevent charging/discharging of the parasitic capacitance of a signal wire

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893258A (en) * 1981-11-30 1983-06-02 Seiko Epson Corp Semiconductor device
JPS58103164A (en) * 1981-12-16 1983-06-20 Toshiba Corp Semiconductor device
JPS59158536A (en) * 1983-02-28 1984-09-08 Nec Corp Semiconductor device with multilayer interconnection
JPS59193047A (en) * 1983-04-18 1984-11-01 Seiko Epson Corp Semiconductor integrated circuit device
JPS59194448A (en) * 1983-04-18 1984-11-05 Seiko Epson Corp Semiconductor integrated circuit device
JPS61131548A (en) * 1984-11-30 1986-06-19 Mitsubishi Electric Corp Semiconductor device
US4712126A (en) * 1986-03-17 1987-12-08 Rca Corporation Low resistance tunnel
JPS63158851A (en) * 1986-12-22 1988-07-01 Nec Corp Semiconductor integrated circuit device
US6348723B1 (en) 1995-04-28 2002-02-19 Sharp Kabushiki Kaisha Semiconductor device with a dummy wire positioned to prevent charging/discharging of the parasitic capacitance of a signal wire

Also Published As

Publication number Publication date
JPS583379B2 (en) 1983-01-21

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