JPS53138279A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53138279A
JPS53138279A JP5205477A JP5205477A JPS53138279A JP S53138279 A JPS53138279 A JP S53138279A JP 5205477 A JP5205477 A JP 5205477A JP 5205477 A JP5205477 A JP 5205477A JP S53138279 A JPS53138279 A JP S53138279A
Authority
JP
Japan
Prior art keywords
semiconductor device
eliminate
separating
layers
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5205477A
Other languages
Japanese (ja)
Inventor
Yasumasa Takahashi
Ikuo Usui
Tatsuo Matsuki
Susumu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd, Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP5205477A priority Critical patent/JPS53138279A/en
Publication of JPS53138279A publication Critical patent/JPS53138279A/en
Pending legal-status Critical Current

Links

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  • Element Separation (AREA)

Abstract

PURPOSE: To eliminate a short trouble by separating P+ and N+ layers which have been formed on a N- layer by a groove reaching the substrate from its surface.
COPYRIGHT: (C)1978,JPO&Japio
JP5205477A 1977-05-09 1977-05-09 Semiconductor device Pending JPS53138279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5205477A JPS53138279A (en) 1977-05-09 1977-05-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5205477A JPS53138279A (en) 1977-05-09 1977-05-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53138279A true JPS53138279A (en) 1978-12-02

Family

ID=12904084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5205477A Pending JPS53138279A (en) 1977-05-09 1977-05-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53138279A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282892A (en) * 2002-03-08 2003-10-03 Internatl Business Mach Corp <Ibm> Method and structure of low-capacitance esd-resistant diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5057588A (en) * 1973-09-20 1975-05-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5057588A (en) * 1973-09-20 1975-05-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282892A (en) * 2002-03-08 2003-10-03 Internatl Business Mach Corp <Ibm> Method and structure of low-capacitance esd-resistant diode

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