JPS5586165A - Semiconductor strain transducer - Google Patents
Semiconductor strain transducerInfo
- Publication number
- JPS5586165A JPS5586165A JP15858478A JP15858478A JPS5586165A JP S5586165 A JPS5586165 A JP S5586165A JP 15858478 A JP15858478 A JP 15858478A JP 15858478 A JP15858478 A JP 15858478A JP S5586165 A JPS5586165 A JP S5586165A
- Authority
- JP
- Japan
- Prior art keywords
- film
- hole
- electrode
- sio
- break
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Pressure Sensors (AREA)
- Weting (AREA)
Abstract
PURPOSE: To avoid a break in an electrode by the method wherein the entire surface is covered with laminated films by providing a strain sensing region in a semiconductor substrate, and when a metal electrode is fitted by opening a hole on the region, the diameter of the hole is made larger in the upper layers.
CONSTITUTION: A p-type gage resistor 2 is formed by diffusion on n-type Si substrate 1, and the entire surface is covered with a laminate of SiO2 film 3, PSG film 4 and SiO2 film 5. Next, by photoetching, a large hole is cut in the uppermost layer film 5, a smaller hole is cut in intermediate film 4, and a still smaller hole in the lowest layer film 3. Subsequently, Al electrode 6, expanding onto film 5, is formed on the exposed surface of resistor 2. By this, no hollow cavities appear in the electrode so that a break is prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15858478A JPS5586165A (en) | 1978-12-25 | 1978-12-25 | Semiconductor strain transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15858478A JPS5586165A (en) | 1978-12-25 | 1978-12-25 | Semiconductor strain transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5586165A true JPS5586165A (en) | 1980-06-28 |
JPS6222470B2 JPS6222470B2 (en) | 1987-05-18 |
Family
ID=15674875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15858478A Granted JPS5586165A (en) | 1978-12-25 | 1978-12-25 | Semiconductor strain transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5586165A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53117972A (en) * | 1977-03-25 | 1978-10-14 | Hitachi Ltd | Semiconductor device |
-
1978
- 1978-12-25 JP JP15858478A patent/JPS5586165A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53117972A (en) * | 1977-03-25 | 1978-10-14 | Hitachi Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6222470B2 (en) | 1987-05-18 |
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