JPS5586165A - Semiconductor strain transducer - Google Patents

Semiconductor strain transducer

Info

Publication number
JPS5586165A
JPS5586165A JP15858478A JP15858478A JPS5586165A JP S5586165 A JPS5586165 A JP S5586165A JP 15858478 A JP15858478 A JP 15858478A JP 15858478 A JP15858478 A JP 15858478A JP S5586165 A JPS5586165 A JP S5586165A
Authority
JP
Japan
Prior art keywords
film
hole
electrode
sio
break
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15858478A
Other languages
Japanese (ja)
Other versions
JPS6222470B2 (en
Inventor
Michitaka Shimazoe
Yukio Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15858478A priority Critical patent/JPS5586165A/en
Publication of JPS5586165A publication Critical patent/JPS5586165A/en
Publication of JPS6222470B2 publication Critical patent/JPS6222470B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To avoid a break in an electrode by the method wherein the entire surface is covered with laminated films by providing a strain sensing region in a semiconductor substrate, and when a metal electrode is fitted by opening a hole on the region, the diameter of the hole is made larger in the upper layers.
CONSTITUTION: A p-type gage resistor 2 is formed by diffusion on n-type Si substrate 1, and the entire surface is covered with a laminate of SiO2 film 3, PSG film 4 and SiO2 film 5. Next, by photoetching, a large hole is cut in the uppermost layer film 5, a smaller hole is cut in intermediate film 4, and a still smaller hole in the lowest layer film 3. Subsequently, Al electrode 6, expanding onto film 5, is formed on the exposed surface of resistor 2. By this, no hollow cavities appear in the electrode so that a break is prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP15858478A 1978-12-25 1978-12-25 Semiconductor strain transducer Granted JPS5586165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15858478A JPS5586165A (en) 1978-12-25 1978-12-25 Semiconductor strain transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15858478A JPS5586165A (en) 1978-12-25 1978-12-25 Semiconductor strain transducer

Publications (2)

Publication Number Publication Date
JPS5586165A true JPS5586165A (en) 1980-06-28
JPS6222470B2 JPS6222470B2 (en) 1987-05-18

Family

ID=15674875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15858478A Granted JPS5586165A (en) 1978-12-25 1978-12-25 Semiconductor strain transducer

Country Status (1)

Country Link
JP (1) JPS5586165A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53117972A (en) * 1977-03-25 1978-10-14 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53117972A (en) * 1977-03-25 1978-10-14 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6222470B2 (en) 1987-05-18

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