JPS5640258A - Formation of two-layer structure wiring - Google Patents

Formation of two-layer structure wiring

Info

Publication number
JPS5640258A
JPS5640258A JP11557079A JP11557079A JPS5640258A JP S5640258 A JPS5640258 A JP S5640258A JP 11557079 A JP11557079 A JP 11557079A JP 11557079 A JP11557079 A JP 11557079A JP S5640258 A JPS5640258 A JP S5640258A
Authority
JP
Japan
Prior art keywords
poly
wire
film
breaking
taper angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11557079A
Other languages
Japanese (ja)
Inventor
Yoshihiro Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11557079A priority Critical patent/JPS5640258A/en
Publication of JPS5640258A publication Critical patent/JPS5640258A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the breaking of an Al wire by performing plasma etching for a two-layer thin film of poly Si and Al by gas consisting of Cl2 as a principal ingredient wherein the thin film is processed in a shape having any taper angle. CONSTITUTION:Poly Si2 and Al3 are placed on SiO2 1 to house in an opposite electrode type plasma etching device. CCl4 gas pressure and output conditions are adjusted and photo etching is applied for the Al at a speed of 1-3 times faster than the poly Si. The Al-poly Si two-layer film is etched to form a shape having any taper angle by arbitrarily selecting a photo etching speed ratio. Even if a protecting film 7 and an Al wire 9 are provided on the two-layer film, no breaking of the Al wire will exist.
JP11557079A 1979-09-07 1979-09-07 Formation of two-layer structure wiring Pending JPS5640258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11557079A JPS5640258A (en) 1979-09-07 1979-09-07 Formation of two-layer structure wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11557079A JPS5640258A (en) 1979-09-07 1979-09-07 Formation of two-layer structure wiring

Publications (1)

Publication Number Publication Date
JPS5640258A true JPS5640258A (en) 1981-04-16

Family

ID=14665824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11557079A Pending JPS5640258A (en) 1979-09-07 1979-09-07 Formation of two-layer structure wiring

Country Status (1)

Country Link
JP (1) JPS5640258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61195276U (en) * 1985-04-19 1986-12-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61195276U (en) * 1985-04-19 1986-12-05
JPH0325109Y2 (en) * 1985-04-19 1991-05-31

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