JPS5529174A - Manufacturing of triac - Google Patents

Manufacturing of triac

Info

Publication number
JPS5529174A
JPS5529174A JP10307078A JP10307078A JPS5529174A JP S5529174 A JPS5529174 A JP S5529174A JP 10307078 A JP10307078 A JP 10307078A JP 10307078 A JP10307078 A JP 10307078A JP S5529174 A JPS5529174 A JP S5529174A
Authority
JP
Japan
Prior art keywords
region
serving
gate electrode
opening
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10307078A
Other languages
Japanese (ja)
Inventor
Kaname Otaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10307078A priority Critical patent/JPS5529174A/en
Publication of JPS5529174A publication Critical patent/JPS5529174A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: When forming the n-type region which serves as the gate electrode comprising a TRIAC, to improve the characteristic by removing the n-type region to the predetermined depth in advance and obtaining the constant gate trigger current in each mode.
CONSTITUTION: At both surface of an n-type Si substrate 1 are formed p-type layers 3 and 4 by diffusion, respectively, upon which are coated with SiO2 films 2. An opening is made to effect the formation of the n-type region serving as the gate electrode on the layer 3 therethrough. Next, the exposed portion of the layer 3 is removed through a chemical etching to the predetermined depth so as to form a recess 11. Then, after providing an opening through the flim 2 at the position adjacent to the recess 11, and N1 region 5 serving as a main electrode and NG region 7 serving as a gate electrode are formed simulanaeously by diffusion within the above opening and recess 11 respectively. Similarly, after providing an opening through the film 2 on the layer 4, an N2 region 6 serving as an electrode is formed by diffusion to obtain the TRIAC with 5 layers structure of NPNPN. This enables the trigger current to become constant even in he different modes where positive or negative voltage is applied on the gate electrode.
COPYRIGHT: (C)1980,JPO&Japio
JP10307078A 1978-08-23 1978-08-23 Manufacturing of triac Pending JPS5529174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10307078A JPS5529174A (en) 1978-08-23 1978-08-23 Manufacturing of triac

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10307078A JPS5529174A (en) 1978-08-23 1978-08-23 Manufacturing of triac

Publications (1)

Publication Number Publication Date
JPS5529174A true JPS5529174A (en) 1980-03-01

Family

ID=14344387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10307078A Pending JPS5529174A (en) 1978-08-23 1978-08-23 Manufacturing of triac

Country Status (1)

Country Link
JP (1) JPS5529174A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275435A (en) * 1985-05-09 1986-12-05 バ−リントン・インダストリイズ・インコ−ポレイテツド Vacuum spinning of bundled yarn from sliver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275435A (en) * 1985-05-09 1986-12-05 バ−リントン・インダストリイズ・インコ−ポレイテツド Vacuum spinning of bundled yarn from sliver

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