JPS5456357A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5456357A JPS5456357A JP12235877A JP12235877A JPS5456357A JP S5456357 A JPS5456357 A JP S5456357A JP 12235877 A JP12235877 A JP 12235877A JP 12235877 A JP12235877 A JP 12235877A JP S5456357 A JPS5456357 A JP S5456357A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- mask
- oxide film
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To produce a device of small element sizes by forming the opposite conductivity type layer formed on substrate front to island form by etching grooves and performing enlarged diffusion.
CONSTITUTION: After an N+ layer 2 and an oxide film 3 are made on P type Si, etching grooves 5 are provided through a nitride film mask 4, isolating the N+ layer 2 in island form. P+ ion implanted layers 6 are created only in the groove bottom by making use of the eaves 4' of the the mask, after which annealing is performed. When the films 4, 3 are removed and an N layer 8 is made, the N+ layer 2 and P+ layer 6 diffuse in the layer 8. Next, masks 13 by oxide film 11 and nitride film 12 are selectively formed, after which an oxide film 14 is made. The film 14 is selectively opened and N+ layers 16 are made down to the layer 2. Next, B ions are implanted to create a P layer 17 through self-alignment. After annealing in N2, the surface is covered with PSG 18 and further a phosphorus doped viscous glass film 19 is spin-coated to flatten the grooves. Next, the films 19, 18, 14 are opened, an N+ layer 20 is provided and electrode windows 20, 23 are selectively formed, to which electrodes are attached. Since this method eliminates the need for mask margins and does not produce any bird heads, the scale of integration may be increased
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12235877A JPS5456357A (en) | 1977-10-14 | 1977-10-14 | Production of semiconductor device |
| US05/931,007 US4219369A (en) | 1977-09-30 | 1978-08-04 | Method of making semiconductor integrated circuit device |
| DE19782840975 DE2840975A1 (en) | 1977-09-30 | 1978-09-20 | METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR CIRCUIT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12235877A JPS5456357A (en) | 1977-10-14 | 1977-10-14 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5456357A true JPS5456357A (en) | 1979-05-07 |
Family
ID=14833913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12235877A Pending JPS5456357A (en) | 1977-09-30 | 1977-10-14 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5456357A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5613743A (en) * | 1979-07-16 | 1981-02-10 | Fujitsu Ltd | Semiconductor device and its manufacture |
| JPS5630737A (en) * | 1979-08-21 | 1981-03-27 | Seiko Epson Corp | Semiconductor ic circuit |
| JPS5879752A (en) * | 1981-11-06 | 1983-05-13 | Hitachi Ltd | Semiconductor device |
| JPH01134914A (en) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1977
- 1977-10-14 JP JP12235877A patent/JPS5456357A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5613743A (en) * | 1979-07-16 | 1981-02-10 | Fujitsu Ltd | Semiconductor device and its manufacture |
| JPS5630737A (en) * | 1979-08-21 | 1981-03-27 | Seiko Epson Corp | Semiconductor ic circuit |
| JPH0147010B2 (en) * | 1979-08-21 | 1989-10-12 | Seiko Epson Corp | |
| JPS5879752A (en) * | 1981-11-06 | 1983-05-13 | Hitachi Ltd | Semiconductor device |
| JPH0512863B2 (en) * | 1981-11-06 | 1993-02-19 | Hitachi Ltd | |
| JPH01134914A (en) * | 1987-11-20 | 1989-05-26 | Fujitsu Ltd | Manufacture of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56134757A (en) | Complementary type mos semiconductor device and its manufacture | |
| JPS5471564A (en) | Production of semiconductor device | |
| JPS5456357A (en) | Production of semiconductor device | |
| JPS5562771A (en) | Integrated circuit device | |
| JPS54154967A (en) | Semiconductor electronic device | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| JPS5775460A (en) | Manufacture of semiconductor device | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS5515230A (en) | Semiconductor device and its manufacturing method | |
| JPS56157025A (en) | Manufacture of semiconductor device | |
| JPS5483778A (en) | Mos semiconductor device and its manufacture | |
| JPS5451383A (en) | Production of semiconductor element | |
| JPS56126957A (en) | Manufacture of semiconductor device | |
| JPS54143076A (en) | Semiconductor device and its manufacture | |
| JPS57147267A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS56148825A (en) | Manufacture of semiconductor device | |
| JPS5372473A (en) | Manufacture of mis type semicondctor device | |
| JPS5556646A (en) | Manufacture of semiconductor device | |
| JPS559477A (en) | Method of making semiconductor device | |
| JPS5460576A (en) | Manufacture of insulating gate type field effect transistor | |
| JPS57114274A (en) | Electrode for semiconductor device and manufacture thereof | |
| JPS5698832A (en) | Preparation of semiconductor device | |
| JPS5546570A (en) | Method of fabricating mos semiconductor device | |
| JPS5447488A (en) | Production of silicon gate type mis semiconductor device | |
| JPS57132357A (en) | Manufacture of semiconductor element |