JPS5556646A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5556646A JPS5556646A JP13015278A JP13015278A JPS5556646A JP S5556646 A JPS5556646 A JP S5556646A JP 13015278 A JP13015278 A JP 13015278A JP 13015278 A JP13015278 A JP 13015278A JP S5556646 A JPS5556646 A JP S5556646A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- sio
- heat treatment
- psg
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To prevent the lowering of the mobility of a SOS device, by obstructing the diffusion of phosphor to the source and drain layers of a p channel element from PSG by means of an extremely simple means, and by executing heat treatment of every kind in an amalgamated shape.
CONSTITUTION: Poly-Si gate electrodes 4 are manufactured on Si islands 2a, 2b on sapphire 1 by resist masks 6 through SiO23. Ions are injected to n and p channel elements q2, q1 by successively using resist masks 7, 8, and a p+-layer to the island 2a and an n+ gate electrode and an n+ layer to the island 2b. The sapphire is coated with PSG5, electrode windows 5a'5B are produced, phosphor is injected to layers 4 in non-additional shapes at the p channel element Q1 side when softening the whole by means of heat tratment and n+ gate electrodes are formed. Lastly, SiO23 exposed to the windows 5aW5d is etched. Al wiring 6aW6d are manufactured and the wiring is covered with the PSG. Thus, the undesirable diffusion of phosphor and the lowering of the mobility of a SOS device can be prevented because the SiO2 films 3 are beforehand left, multi-purpose is accomplished by means of one heat treatment and the time of heat treatment is shortened.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53130152A JPS594864B2 (en) | 1978-10-23 | 1978-10-23 | Manufacturing method for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53130152A JPS594864B2 (en) | 1978-10-23 | 1978-10-23 | Manufacturing method for semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5556646A true JPS5556646A (en) | 1980-04-25 |
JPS594864B2 JPS594864B2 (en) | 1984-02-01 |
Family
ID=15027219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53130152A Expired JPS594864B2 (en) | 1978-10-23 | 1978-10-23 | Manufacturing method for semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS594864B2 (en) |
-
1978
- 1978-10-23 JP JP53130152A patent/JPS594864B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS594864B2 (en) | 1984-02-01 |
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