JPS5630737A - Semiconductor ic circuit - Google Patents

Semiconductor ic circuit

Info

Publication number
JPS5630737A
JPS5630737A JP10642179A JP10642179A JPS5630737A JP S5630737 A JPS5630737 A JP S5630737A JP 10642179 A JP10642179 A JP 10642179A JP 10642179 A JP10642179 A JP 10642179A JP S5630737 A JPS5630737 A JP S5630737A
Authority
JP
Japan
Prior art keywords
element separation
groove
oxidized film
epitaxial
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10642179A
Other languages
Japanese (ja)
Other versions
JPH0147010B2 (en
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP10642179A priority Critical patent/JPS5630737A/en
Publication of JPS5630737A publication Critical patent/JPS5630737A/en
Publication of JPH0147010B2 publication Critical patent/JPH0147010B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To minimize a distance necessary for an element separation to the limit by a method wherein a groove is formed on the top of an epitaxial-layer and made a wall for the element separation covering with an oxidized film. CONSTITUTION:The U-shape groove is formed at the portion corresponding to the element separation of a substrate 10. When an epitaxial-layer 12 is grown on the substrate, the groove of the epitaxial-layer is made a groove 13 in slightly languish shape. When thermal oxidation is then applied to the surface, an oxidized film 14 is adhered to the surface and at the same time, there is formed a deep walled groove 15 covered with the oxidized film of narrow width and thickness. With the removal of the oxidized film 14 on the surface, the wall 15 is left behind and used for the element separation. If a thickness of the oxidized film is of the order of 3mum, the element separation becomes completely possible without mutual connection of the depletion layers of the diffusing layers 16 and 17. Whereby the distance required for the element separation can be reduced to 1mum without a special technic of lithography, and the degree of integration can be improved in wide range.
JP10642179A 1979-08-21 1979-08-21 Semiconductor ic circuit Granted JPS5630737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10642179A JPS5630737A (en) 1979-08-21 1979-08-21 Semiconductor ic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10642179A JPS5630737A (en) 1979-08-21 1979-08-21 Semiconductor ic circuit

Publications (2)

Publication Number Publication Date
JPS5630737A true JPS5630737A (en) 1981-03-27
JPH0147010B2 JPH0147010B2 (en) 1989-10-12

Family

ID=14433191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10642179A Granted JPS5630737A (en) 1979-08-21 1979-08-21 Semiconductor ic circuit

Country Status (1)

Country Link
JP (1) JPS5630737A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit
JPS5260581A (en) * 1975-11-14 1977-05-19 Agency Of Ind Science & Technol Semiconductor device
JPS5456357A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Production of semiconductor device
JPS5457877A (en) * 1978-08-28 1979-05-10 Hitachi Ltd Semiconductor device
JPS5499575U (en) * 1977-12-26 1979-07-13

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226182A (en) * 1975-08-25 1977-02-26 Hitachi Ltd Manufacturing method of semi-conductor unit
JPS5260581A (en) * 1975-11-14 1977-05-19 Agency Of Ind Science & Technol Semiconductor device
JPS5456357A (en) * 1977-10-14 1979-05-07 Hitachi Ltd Production of semiconductor device
JPS5499575U (en) * 1977-12-26 1979-07-13
JPS5457877A (en) * 1978-08-28 1979-05-10 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0147010B2 (en) 1989-10-12

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