JPS56120155A - Coil for semiconductor integrated circuit and its manufacture - Google Patents
Coil for semiconductor integrated circuit and its manufactureInfo
- Publication number
- JPS56120155A JPS56120155A JP2322080A JP2322080A JPS56120155A JP S56120155 A JPS56120155 A JP S56120155A JP 2322080 A JP2322080 A JP 2322080A JP 2322080 A JP2322080 A JP 2322080A JP S56120155 A JPS56120155 A JP S56120155A
- Authority
- JP
- Japan
- Prior art keywords
- coil
- layer
- electroconductive
- integrated circuit
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/004—Printed inductances with the coil helically wound around an axis without a core
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a coil by connecting an electroconductive layer pattern formed on a semiconductor to an electroconductive layer formed on an insulation film for a semiconductor substrate. CONSTITUTION:An N epitaxial layer 2 on a silicon substrate 1 is separated 11 and layers P 12, 3 are provided on regions T and L respectively. In addition, an electroconductive pattern is selectively prepd. on N layer 13 and N layer 4. A silicon film of desired thickness is overlaid to set a coil cross-sectional area. Then an opening is made at the edge of an electroconductive pattern 4, and is covered with a metallic film and is processed by means of patterning to form a metallic strip piece 6 and a transistor electrode 15. In this way, it is possible to easily form a coil of many windings utilizing the molding process of the other circuit element with the help of integrated circuit technology.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2322080A JPS56120155A (en) | 1980-02-26 | 1980-02-26 | Coil for semiconductor integrated circuit and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2322080A JPS56120155A (en) | 1980-02-26 | 1980-02-26 | Coil for semiconductor integrated circuit and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56120155A true JPS56120155A (en) | 1981-09-21 |
Family
ID=12104563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2322080A Pending JPS56120155A (en) | 1980-02-26 | 1980-02-26 | Coil for semiconductor integrated circuit and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56120155A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1093164A1 (en) * | 1999-10-12 | 2001-04-18 | Lucent Technologies Inc. | Lateral high-Q inductor for semiconductor devices |
FR2823374A1 (en) * | 2001-04-06 | 2002-10-11 | St Microelectronics Sa | INTEGRATED INDUCTANCE |
-
1980
- 1980-02-26 JP JP2322080A patent/JPS56120155A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1093164A1 (en) * | 1999-10-12 | 2001-04-18 | Lucent Technologies Inc. | Lateral high-Q inductor for semiconductor devices |
US6292086B1 (en) | 1999-10-12 | 2001-09-18 | Agere Systems Guardian Corp. | Lateral high-Q inductor for semiconductor devices |
FR2823374A1 (en) * | 2001-04-06 | 2002-10-11 | St Microelectronics Sa | INTEGRATED INDUCTANCE |
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