JPS56120155A - Coil for semiconductor integrated circuit and its manufacture - Google Patents

Coil for semiconductor integrated circuit and its manufacture

Info

Publication number
JPS56120155A
JPS56120155A JP2322080A JP2322080A JPS56120155A JP S56120155 A JPS56120155 A JP S56120155A JP 2322080 A JP2322080 A JP 2322080A JP 2322080 A JP2322080 A JP 2322080A JP S56120155 A JPS56120155 A JP S56120155A
Authority
JP
Japan
Prior art keywords
coil
layer
electroconductive
integrated circuit
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2322080A
Other languages
Japanese (ja)
Inventor
Hironari Mannami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP2322080A priority Critical patent/JPS56120155A/en
Publication of JPS56120155A publication Critical patent/JPS56120155A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F17/0006Printed inductances
    • H01F2017/004Printed inductances with the coil helically wound around an axis without a core

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Cores, Coils, And Magnets (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a coil by connecting an electroconductive layer pattern formed on a semiconductor to an electroconductive layer formed on an insulation film for a semiconductor substrate. CONSTITUTION:An N epitaxial layer 2 on a silicon substrate 1 is separated 11 and layers P 12, 3 are provided on regions T and L respectively. In addition, an electroconductive pattern is selectively prepd. on N layer 13 and N layer 4. A silicon film of desired thickness is overlaid to set a coil cross-sectional area. Then an opening is made at the edge of an electroconductive pattern 4, and is covered with a metallic film and is processed by means of patterning to form a metallic strip piece 6 and a transistor electrode 15. In this way, it is possible to easily form a coil of many windings utilizing the molding process of the other circuit element with the help of integrated circuit technology.
JP2322080A 1980-02-26 1980-02-26 Coil for semiconductor integrated circuit and its manufacture Pending JPS56120155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2322080A JPS56120155A (en) 1980-02-26 1980-02-26 Coil for semiconductor integrated circuit and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2322080A JPS56120155A (en) 1980-02-26 1980-02-26 Coil for semiconductor integrated circuit and its manufacture

Publications (1)

Publication Number Publication Date
JPS56120155A true JPS56120155A (en) 1981-09-21

Family

ID=12104563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2322080A Pending JPS56120155A (en) 1980-02-26 1980-02-26 Coil for semiconductor integrated circuit and its manufacture

Country Status (1)

Country Link
JP (1) JPS56120155A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1093164A1 (en) * 1999-10-12 2001-04-18 Lucent Technologies Inc. Lateral high-Q inductor for semiconductor devices
FR2823374A1 (en) * 2001-04-06 2002-10-11 St Microelectronics Sa INTEGRATED INDUCTANCE

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1093164A1 (en) * 1999-10-12 2001-04-18 Lucent Technologies Inc. Lateral high-Q inductor for semiconductor devices
US6292086B1 (en) 1999-10-12 2001-09-18 Agere Systems Guardian Corp. Lateral high-Q inductor for semiconductor devices
FR2823374A1 (en) * 2001-04-06 2002-10-11 St Microelectronics Sa INTEGRATED INDUCTANCE

Similar Documents

Publication Publication Date Title
JPS5643749A (en) Semiconductor device and its manufacture
JPS56120155A (en) Coil for semiconductor integrated circuit and its manufacture
JPS5375877A (en) Vertical type micro mos transistor
JPS56120154A (en) Coil and its manufacture
JPS57167659A (en) Manufacture of semiconductor device
JPS5766672A (en) Semiconductor device
JPS5740967A (en) Integrated circuit device
JPS5637674A (en) Manufacture of semiconductor device
JPS5664467A (en) Mos type semiconductor device
JPS5779633A (en) Manufacture of semiconductor device
JPS5552252A (en) Semiconductor integrated circuit device and manufacturing of them
JPS5629369A (en) Insulated gate type field effect transistor
JPS5660065A (en) Semiconductor device
JPS5339882A (en) Production of vertical field effect transistor
JPS5642352A (en) Manufacture of composite semiconductor device
JPS5492180A (en) Manufacture of semiconductor device
JPS5447493A (en) Semiconductor integrated circuit device and production of the same
JPS551179A (en) Complementary mis integrated circuit apparatus
JPS5317286A (en) Production of semiconductor device
JPS5522882A (en) Semiconductor device
JPS5565456A (en) Manufacture of semiconductor device
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS56157043A (en) Manufacture of semiconductor device
JPS56138940A (en) Manufacture of semiconductor device
JPS554915A (en) Semi-conductor manufacturing method