JPS5447493A - Semiconductor integrated circuit device and production of the same - Google Patents

Semiconductor integrated circuit device and production of the same

Info

Publication number
JPS5447493A
JPS5447493A JP11269577A JP11269577A JPS5447493A JP S5447493 A JPS5447493 A JP S5447493A JP 11269577 A JP11269577 A JP 11269577A JP 11269577 A JP11269577 A JP 11269577A JP S5447493 A JPS5447493 A JP S5447493A
Authority
JP
Japan
Prior art keywords
layer
layers
epitaxial
dielectric strength
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11269577A
Other languages
Japanese (ja)
Other versions
JPS6138619B2 (en
Inventor
Kaoru Niino
Takanori Nishimura
Kenji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11269577A priority Critical patent/JPS5447493A/en
Publication of JPS5447493A publication Critical patent/JPS5447493A/en
Publication of JPS6138619B2 publication Critical patent/JPS6138619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Abstract

PURPOSE:To improve the dielectric strength of high delectric strength elements by forming small signal elements and high dielectric strength elements on one substrate and eliminating the self- dosing action in double epitaxial layers. CONSTITUTION:An N<+> epitaxial layer 4 is made on a p type Si substrate 1 and is deposited with an (n) epitaxial layer 4. An N<+> buried layer 6 and a p<+> deposition layer 11 are made on the layer 4, and are deposited with an n- layer 7. Next, with the surface oxide film 8 as a mask, the layer 7 is etched and the layer 4 on the layer 3 is slightly scraped to selectively create recesses 9. An oxide film 10 is newly formed over the entire surface, and p<+> isolating layers 18 are made through stretching and diffusion from the P<+> layer 11, connecting to (p) layer 1. Next, a high dielectric strength element having p<+> base 12, n<+> emitter n<+> collector lead-out part 14 is provided in the layer 4 on the buried layer 3, and a small signal element having p<+> base 15, n<+> emitter 16, n<+> collector lead-out part 17 is created in the layer 7 on the buried layer 6 in an ordinary manner, after which Al wirings are formed to complete the device. In this method, the interfaces of the layers 4, 7 have been selectively removed and therefore the impurity layers by self-dosing may be removed, then uniform epitaxial layer formed and the high dielection strength element formed.
JP11269577A 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same Granted JPS5447493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11269577A JPS5447493A (en) 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11269577A JPS5447493A (en) 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same

Publications (2)

Publication Number Publication Date
JPS5447493A true JPS5447493A (en) 1979-04-14
JPS6138619B2 JPS6138619B2 (en) 1986-08-30

Family

ID=14593164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11269577A Granted JPS5447493A (en) 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same

Country Status (1)

Country Link
JP (1) JPS5447493A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139962A (en) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US4950616A (en) * 1988-07-13 1990-08-21 Samsung Electronics Co., Ltd. Method for fabricating a BiCMOS device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950616A (en) * 1988-07-13 1990-08-21 Samsung Electronics Co., Ltd. Method for fabricating a BiCMOS device
JPH02139962A (en) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS6138619B2 (en) 1986-08-30

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