JPS56147474A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56147474A
JPS56147474A JP5143180A JP5143180A JPS56147474A JP S56147474 A JPS56147474 A JP S56147474A JP 5143180 A JP5143180 A JP 5143180A JP 5143180 A JP5143180 A JP 5143180A JP S56147474 A JPS56147474 A JP S56147474A
Authority
JP
Japan
Prior art keywords
layer
grooves
poly
resistance layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5143180A
Other languages
Japanese (ja)
Other versions
JPH0258784B2 (en
Inventor
Yunosuke Kawabe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5143180A priority Critical patent/JPS56147474A/en
Publication of JPS56147474A publication Critical patent/JPS56147474A/en
Publication of JPH0258784B2 publication Critical patent/JPH0258784B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To simplify the manufacture of a poly Si resistance layer by depositing semiconductor layer on element separating grooves and element regions at the same time, and imparting conductive property. CONSTITUTION:A (100) face of an N epitaxial layer 32 on a P type Si substrate 33 having an N<+> embedded layer 34 is anisotropically etched out, and V grooves 40 and 41 are formed. The surface of the grooves is covered by SiO2 31, and the grooves are filled by poly Si. Impurities are added to the grooves 41 and a resistance layer 39 is formed. Then, Al wirings 28 are provided as usual, and the resistance layer 39 and a collector layer 38 are connected. Therefore, the resistor 39 is connected to an NPN transistor in series. In this constitution, the growth of poly Si for forming the resistance layer 39 need not be separated from the process of forming a separating layer. Thus, the processes can be simplified.
JP5143180A 1980-04-18 1980-04-18 Manufacture of semiconductor device Granted JPS56147474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5143180A JPS56147474A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5143180A JPS56147474A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56147474A true JPS56147474A (en) 1981-11-16
JPH0258784B2 JPH0258784B2 (en) 1990-12-10

Family

ID=12886734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5143180A Granted JPS56147474A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56147474A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183461A (en) * 1993-12-24 1995-07-21 Nec Corp Semiconductor integrated circuit device
JP2011124300A (en) * 2009-12-09 2011-06-23 Renesas Electronics Corp Semiconductor device, and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183461A (en) * 1993-12-24 1995-07-21 Nec Corp Semiconductor integrated circuit device
JP2011124300A (en) * 2009-12-09 2011-06-23 Renesas Electronics Corp Semiconductor device, and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0258784B2 (en) 1990-12-10

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