JPS5772373A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5772373A
JPS5772373A JP14762380A JP14762380A JPS5772373A JP S5772373 A JPS5772373 A JP S5772373A JP 14762380 A JP14762380 A JP 14762380A JP 14762380 A JP14762380 A JP 14762380A JP S5772373 A JPS5772373 A JP S5772373A
Authority
JP
Japan
Prior art keywords
layer
insulating film
region
semiconductor region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14762380A
Other languages
Japanese (ja)
Inventor
Akio Tamama
Yasusuke Yamamoto
Masahiro Sakagami
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14762380A priority Critical patent/JPS5772373A/en
Publication of JPS5772373A publication Critical patent/JPS5772373A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Abstract

PURPOSE:To miniaturize the whole element, and to minimize power consumption by each forming a single crystal region and a polycrystal region on an insulating film. CONSTITUTION:A P type semiconductor region 4 is formed through a hole shaped into the insulating film layer 6 from the main surface side in a substrate 1 in which an N type semiconductor layer 1b having comparatively high resistivity is molded onto an N<+> type substrate 1a having comparatively low resistivity. An N type semiconductor layer is further grown on the main surface containing the insulating film layer 6 in an epitaxial manner. In this case, a section on the semiconductor region 4 functions as the signal crystal layer 7 and a section on the insulating film layer 6 as the polycrystal layer 8. A vertical bipolar-transistor is formed among the single crystal layer 7, the semiconductor region 4 and the substrate 1, and the semiconductor region 4 serves as its floating-base.
JP14762380A 1980-10-23 1980-10-23 Semiconductor device Pending JPS5772373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14762380A JPS5772373A (en) 1980-10-23 1980-10-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14762380A JPS5772373A (en) 1980-10-23 1980-10-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5772373A true JPS5772373A (en) 1982-05-06

Family

ID=15434506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14762380A Pending JPS5772373A (en) 1980-10-23 1980-10-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772373A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body
US4949146A (en) * 1985-12-20 1990-08-14 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body
US4935375A (en) * 1985-12-20 1990-06-19 Licentia Patent-Verwaltungs-Gmbh Method of making a semiconductor device
US4949146A (en) * 1985-12-20 1990-08-14 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body

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