JPS5636149A - Forming method for resistance region - Google Patents
Forming method for resistance regionInfo
- Publication number
- JPS5636149A JPS5636149A JP11115579A JP11115579A JPS5636149A JP S5636149 A JPS5636149 A JP S5636149A JP 11115579 A JP11115579 A JP 11115579A JP 11115579 A JP11115579 A JP 11115579A JP S5636149 A JPS5636149 A JP S5636149A
- Authority
- JP
- Japan
- Prior art keywords
- grooves
- resistance
- element region
- region
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the accuracy of the value of resistance by a method wherein a resistance region is geometrically limited by V-grooves in which a heat resisting insulating material is filled when forming the resistance region of an integrated circuit device. CONSTITUTION:V-grooves 5 are made up on a semiconductor substrate 1 so as to limit an element region 2'. The difference of the speed of etching due to the difference of a surface direction of a substrate crystal is utilized for the formation of the V-grooves. A heat resisting insulating material 6, such as Si3N4, SiO2, Al2O3, etc. is filled in the V-grooves 5 by means of a CVD method. When forming resistance to the element region, ions are successively implanted to the element region, necessary impurities are introduced, and necessary resistance value is obtained. Thus, the element region is limited by the V-grooves, the element region do not vary in a process of heat treatment, and consequently resistance having high accuracy is acquired. Not only resistance but also other elements may similarly be made up in the element region. The V-grooves may be exchanged for U-grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11115579A JPS5636149A (en) | 1979-08-31 | 1979-08-31 | Forming method for resistance region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11115579A JPS5636149A (en) | 1979-08-31 | 1979-08-31 | Forming method for resistance region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5636149A true JPS5636149A (en) | 1981-04-09 |
Family
ID=14553856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11115579A Pending JPS5636149A (en) | 1979-08-31 | 1979-08-31 | Forming method for resistance region |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5636149A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63144160A (en) * | 1986-12-03 | 1988-06-16 | 立見 盛太郎 | Manufacture of colored artificial stone |
| CN110517948A (en) * | 2019-07-26 | 2019-11-29 | 中国科学院微电子研究所 | Extension InP method for semiconductor and semiconductor devices obtained on a kind of silicon substrate |
-
1979
- 1979-08-31 JP JP11115579A patent/JPS5636149A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63144160A (en) * | 1986-12-03 | 1988-06-16 | 立見 盛太郎 | Manufacture of colored artificial stone |
| CN110517948A (en) * | 2019-07-26 | 2019-11-29 | 中国科学院微电子研究所 | Extension InP method for semiconductor and semiconductor devices obtained on a kind of silicon substrate |
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