JPS5327376A - Forming method of high resistanc e layer - Google Patents
Forming method of high resistanc e layerInfo
- Publication number
- JPS5327376A JPS5327376A JP10202976A JP10202976A JPS5327376A JP S5327376 A JPS5327376 A JP S5327376A JP 10202976 A JP10202976 A JP 10202976A JP 10202976 A JP10202976 A JP 10202976A JP S5327376 A JPS5327376 A JP S5327376A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming method
- resistanc
- substrate
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a high resistance layer stable to temperature rise at the later heat treatment and element operation by implanting Ne ions to the entire surface or a part of the As doped layer provided within a Si substrate then subjecting the substrate to heat treatment.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51102029A JPS587065B2 (en) | 1976-08-26 | 1976-08-26 | Semiconductor device with high resistance layer and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51102029A JPS587065B2 (en) | 1976-08-26 | 1976-08-26 | Semiconductor device with high resistance layer and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5327376A true JPS5327376A (en) | 1978-03-14 |
JPS587065B2 JPS587065B2 (en) | 1983-02-08 |
Family
ID=14316318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51102029A Expired JPS587065B2 (en) | 1976-08-26 | 1976-08-26 | Semiconductor device with high resistance layer and method for manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS587065B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62244160A (en) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | Semiconductor device |
US4851359A (en) * | 1985-12-27 | 1989-07-25 | Bull S.A. | Method of producing an electrical resistor by implanting a semiconductor material with rare gas |
-
1976
- 1976-08-26 JP JP51102029A patent/JPS587065B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851359A (en) * | 1985-12-27 | 1989-07-25 | Bull S.A. | Method of producing an electrical resistor by implanting a semiconductor material with rare gas |
JPS62244160A (en) * | 1986-04-17 | 1987-10-24 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS587065B2 (en) | 1983-02-08 |
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