JPS51142975A - Production method of semiconductor devices - Google Patents

Production method of semiconductor devices

Info

Publication number
JPS51142975A
JPS51142975A JP6654875A JP6654875A JPS51142975A JP S51142975 A JPS51142975 A JP S51142975A JP 6654875 A JP6654875 A JP 6654875A JP 6654875 A JP6654875 A JP 6654875A JP S51142975 A JPS51142975 A JP S51142975A
Authority
JP
Japan
Prior art keywords
production method
semiconductor devices
deficit
choose
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6654875A
Other languages
Japanese (ja)
Inventor
Masanobu Miyao
Nobuyoshi Kashu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6654875A priority Critical patent/JPS51142975A/en
Publication of JPS51142975A publication Critical patent/JPS51142975A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To choose the crystal deficit at the density of 2.5 × 1022 cm to 4 × 1022 cm-3 in the region where the ions are injected, in order to lower the annealing temperature and improve the doping effect.
COPYRIGHT: (C)1976,JPO&Japio
JP6654875A 1975-06-04 1975-06-04 Production method of semiconductor devices Pending JPS51142975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6654875A JPS51142975A (en) 1975-06-04 1975-06-04 Production method of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6654875A JPS51142975A (en) 1975-06-04 1975-06-04 Production method of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS51142975A true JPS51142975A (en) 1976-12-08

Family

ID=13319059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6654875A Pending JPS51142975A (en) 1975-06-04 1975-06-04 Production method of semiconductor devices

Country Status (1)

Country Link
JP (1) JPS51142975A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368006A (en) * 1976-11-30 1978-06-17 Hitachi Ltd B board k-charging system
JPS5368007A (en) * 1976-11-30 1978-06-17 Hitachi Ltd B board k-charging system
JPS5857140A (en) * 1981-09-30 1983-04-05 Toshiba Corp Electrostatic latent image developing method
JPS5891630A (en) * 1981-11-26 1983-05-31 Toshiba Corp Manufacture of semiconductor device
JPS59204229A (en) * 1983-05-04 1984-11-19 Sony Corp Manufacture of semiconductor device
JPS6095921A (en) * 1983-10-31 1985-05-29 Toshiba Corp Manufacture of semiconductor device
JPH0235715A (en) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368006A (en) * 1976-11-30 1978-06-17 Hitachi Ltd B board k-charging system
JPS5368007A (en) * 1976-11-30 1978-06-17 Hitachi Ltd B board k-charging system
JPS5857140A (en) * 1981-09-30 1983-04-05 Toshiba Corp Electrostatic latent image developing method
JPS5891630A (en) * 1981-11-26 1983-05-31 Toshiba Corp Manufacture of semiconductor device
JPS59204229A (en) * 1983-05-04 1984-11-19 Sony Corp Manufacture of semiconductor device
JPS6095921A (en) * 1983-10-31 1985-05-29 Toshiba Corp Manufacture of semiconductor device
JPH0235715A (en) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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