JPS51115770A - Annealing method after ion injection - Google Patents
Annealing method after ion injectionInfo
- Publication number
- JPS51115770A JPS51115770A JP4103075A JP4103075A JPS51115770A JP S51115770 A JPS51115770 A JP S51115770A JP 4103075 A JP4103075 A JP 4103075A JP 4103075 A JP4103075 A JP 4103075A JP S51115770 A JPS51115770 A JP S51115770A
- Authority
- JP
- Japan
- Prior art keywords
- ion injection
- annealing method
- injection
- rid
- eliminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inorganic Insulating Materials (AREA)
Abstract
PURPOSE: To eliminate the need to cover the ion injection surface during the annealing process performed after the injection and also to get rid of both the heat disintegration of the semi-conductor material and the effect of the impure atom dispersion.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4103075A JPS51115770A (en) | 1975-04-03 | 1975-04-03 | Annealing method after ion injection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4103075A JPS51115770A (en) | 1975-04-03 | 1975-04-03 | Annealing method after ion injection |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51115770A true JPS51115770A (en) | 1976-10-12 |
JPS5740648B2 JPS5740648B2 (en) | 1982-08-28 |
Family
ID=12596989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4103075A Granted JPS51115770A (en) | 1975-04-03 | 1975-04-03 | Annealing method after ion injection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51115770A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5556637A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
JPS60239030A (en) * | 1984-05-11 | 1985-11-27 | Sumitomo Electric Ind Ltd | Annealing method of compound semiconductor |
JPS6211225A (en) * | 1986-07-18 | 1987-01-20 | Sony Corp | Heat treatment method for iii-v compound semiconductor |
JPH05129203A (en) * | 1991-11-07 | 1993-05-25 | Japan Steel Works Ltd:The | Formation of epitaxial thin film |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0218304Y2 (en) * | 1988-08-01 | 1990-05-22 |
-
1975
- 1975-04-03 JP JP4103075A patent/JPS51115770A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5556637A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Preparation of semiconductor device |
JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
JPS60239030A (en) * | 1984-05-11 | 1985-11-27 | Sumitomo Electric Ind Ltd | Annealing method of compound semiconductor |
JPS6211225A (en) * | 1986-07-18 | 1987-01-20 | Sony Corp | Heat treatment method for iii-v compound semiconductor |
JPH05129203A (en) * | 1991-11-07 | 1993-05-25 | Japan Steel Works Ltd:The | Formation of epitaxial thin film |
Also Published As
Publication number | Publication date |
---|---|
JPS5740648B2 (en) | 1982-08-28 |
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