JPS5556637A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5556637A
JPS5556637A JP12961478A JP12961478A JPS5556637A JP S5556637 A JPS5556637 A JP S5556637A JP 12961478 A JP12961478 A JP 12961478A JP 12961478 A JP12961478 A JP 12961478A JP S5556637 A JPS5556637 A JP S5556637A
Authority
JP
Japan
Prior art keywords
substrate
heat
treated
injected
anneal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12961478A
Inventor
Takeshi Konuma
Toshio Sugawa
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP12961478A priority Critical patent/JPS5556637A/en
Publication of JPS5556637A publication Critical patent/JPS5556637A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent the variation of the stoichiometric composition of a compound semiconductor substrate to which the ions of desired substance are injected, by heat- treating the substrate while holding it between protectors, which contain elements constituting the substrate and which diameters are larger than the substrate, when anneal-treating the substrate.
CONSTITUTION: Si 2 is ion-injected to a semi-insulating GaAs substrate 1 treated mechanically and chemically while bringing acceleration voltage to 150KeV and the quantity of injection to 3×1012/cm2, etc. The substrate is anneal-treated in order to activate Si ions injected and recover the damage of crystals produced in case of injection, but the substrate 1 is heat-treated while covering it with protective plates 3 without covering it with a heat-treatment film at that time. That is, the both sides of the inside and outside of the substrate 1 are covered with polycrystal GaAs protective plates 3, which diameters are larger than the substrate 1 and which are disposed at the distance of 0W5mm to the substrate 1, and the substrate is heat- treated at 800°C for twenty minutes in a hydrogen atmosphere and annealed. Thus, electrical characteristics are bettered because an activation rate of the concentration of carriers, mobility, etc. are improved.
COPYRIGHT: (C)1980,JPO&Japio
JP12961478A 1978-10-20 1978-10-20 Preparation of semiconductor device Pending JPS5556637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12961478A JPS5556637A (en) 1978-10-20 1978-10-20 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12961478A JPS5556637A (en) 1978-10-20 1978-10-20 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5556637A true JPS5556637A (en) 1980-04-25

Family

ID=15013811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12961478A Pending JPS5556637A (en) 1978-10-20 1978-10-20 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5556637A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642334A (en) * 1979-09-13 1981-04-20 Sumitomo Electric Ind Ltd Heat treatment of compound semiconductor
JPS5895813A (en) * 1981-12-01 1983-06-07 Semiconductor Res Found Processing method for crystal of compound semiconductor
JPS6134949A (en) * 1984-07-26 1986-02-19 Nippon Telegr & Teleph Corp <Ntt> Heat treatment for compound semiconductor substrate
US5614447A (en) * 1994-11-30 1997-03-25 New Japan Radio Co., Ltd. Method for heat-treating a semiconductor body
JP2006339396A (en) * 2005-06-02 2006-12-14 Iwasaki Electric Co Ltd Ion implantation annealing method, method of manufacturing semiconductor element, and semiconductor element
JP2008016691A (en) * 2006-07-07 2008-01-24 Kwansei Gakuin Method of reforming surface of single crystal silicon carbide substrate, method of forming single crystal silicon carbide thin film, ion implantation and annealing method, and single crystal silicon carbide substrate and single crystal silicon carbide semiconductor substrate
JP2011176337A (en) * 2005-06-20 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> Diamond semiconductor element and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492511A (en) * 1972-04-20 1974-01-10
JPS51115770A (en) * 1975-04-03 1976-10-12 Sanyo Electric Co Ltd Annealing method after ion injection
JPS5361269A (en) * 1976-11-15 1978-06-01 Hitachi Ltd Heat treatment of compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492511A (en) * 1972-04-20 1974-01-10
JPS51115770A (en) * 1975-04-03 1976-10-12 Sanyo Electric Co Ltd Annealing method after ion injection
JPS5361269A (en) * 1976-11-15 1978-06-01 Hitachi Ltd Heat treatment of compound semiconductor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642334A (en) * 1979-09-13 1981-04-20 Sumitomo Electric Ind Ltd Heat treatment of compound semiconductor
JPS5895813A (en) * 1981-12-01 1983-06-07 Semiconductor Res Found Processing method for crystal of compound semiconductor
JPH0423418B2 (en) * 1981-12-01 1992-04-22 Handotai Kenkyu Shinkokai
JPS6134949A (en) * 1984-07-26 1986-02-19 Nippon Telegr & Teleph Corp <Ntt> Heat treatment for compound semiconductor substrate
US5614447A (en) * 1994-11-30 1997-03-25 New Japan Radio Co., Ltd. Method for heat-treating a semiconductor body
JP2006339396A (en) * 2005-06-02 2006-12-14 Iwasaki Electric Co Ltd Ion implantation annealing method, method of manufacturing semiconductor element, and semiconductor element
JP2011176337A (en) * 2005-06-20 2011-09-08 Nippon Telegr & Teleph Corp <Ntt> Diamond semiconductor element and method for manufacturing the same
JP2008016691A (en) * 2006-07-07 2008-01-24 Kwansei Gakuin Method of reforming surface of single crystal silicon carbide substrate, method of forming single crystal silicon carbide thin film, ion implantation and annealing method, and single crystal silicon carbide substrate and single crystal silicon carbide semiconductor substrate

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