JPS5248479A - Semiconductor device and process for production of the same - Google Patents

Semiconductor device and process for production of the same

Info

Publication number
JPS5248479A
JPS5248479A JP12483075A JP12483075A JPS5248479A JP S5248479 A JPS5248479 A JP S5248479A JP 12483075 A JP12483075 A JP 12483075A JP 12483075 A JP12483075 A JP 12483075A JP S5248479 A JPS5248479 A JP S5248479A
Authority
JP
Japan
Prior art keywords
production
same
semiconductor device
channels
fklm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12483075A
Other languages
Japanese (ja)
Other versions
JPS5915499B2 (en
Inventor
Takeshi Ishihara
Kiyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12483075A priority Critical patent/JPS5915499B2/en
Publication of JPS5248479A publication Critical patent/JPS5248479A/en
Publication of JPS5915499B2 publication Critical patent/JPS5915499B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To aboid the changes in the specific resistance of the channels of SOS-MOS transistors, facilitate the control of threshold voltage and release the restriction in heat treatment temperature, by providing an Si3N4 fklm at the boundary between the channels and the insulating substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP12483075A 1975-10-15 1975-10-15 Semiconductor device and its manufacturing method Expired JPS5915499B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12483075A JPS5915499B2 (en) 1975-10-15 1975-10-15 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12483075A JPS5915499B2 (en) 1975-10-15 1975-10-15 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5248479A true JPS5248479A (en) 1977-04-18
JPS5915499B2 JPS5915499B2 (en) 1984-04-10

Family

ID=14895141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12483075A Expired JPS5915499B2 (en) 1975-10-15 1975-10-15 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5915499B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960692A (en) * 1972-10-13 1974-06-12
US4916304A (en) * 1986-10-07 1990-04-10 Canon Kabushiki Kaisha Image recording device having a conductive layer formed below a light receiving window

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960692A (en) * 1972-10-13 1974-06-12
US4916304A (en) * 1986-10-07 1990-04-10 Canon Kabushiki Kaisha Image recording device having a conductive layer formed below a light receiving window

Also Published As

Publication number Publication date
JPS5915499B2 (en) 1984-04-10

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