JPS5244188A - Semiconductor integrated circuit and process for production of the sam e - Google Patents

Semiconductor integrated circuit and process for production of the sam e

Info

Publication number
JPS5244188A
JPS5244188A JP11977175A JP11977175A JPS5244188A JP S5244188 A JPS5244188 A JP S5244188A JP 11977175 A JP11977175 A JP 11977175A JP 11977175 A JP11977175 A JP 11977175A JP S5244188 A JPS5244188 A JP S5244188A
Authority
JP
Japan
Prior art keywords
sam
production
integrated circuit
semiconductor integrated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11977175A
Other languages
Japanese (ja)
Inventor
Naonobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11977175A priority Critical patent/JPS5244188A/en
Publication of JPS5244188A publication Critical patent/JPS5244188A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simultaneously form an n-channel MOSFET and bipolar transistor on one substrate by using anisotropic etching, and prevent impairment of their characteristics.
JP11977175A 1975-10-06 1975-10-06 Semiconductor integrated circuit and process for production of the sam e Pending JPS5244188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11977175A JPS5244188A (en) 1975-10-06 1975-10-06 Semiconductor integrated circuit and process for production of the sam e

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11977175A JPS5244188A (en) 1975-10-06 1975-10-06 Semiconductor integrated circuit and process for production of the sam e

Publications (1)

Publication Number Publication Date
JPS5244188A true JPS5244188A (en) 1977-04-06

Family

ID=14769787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11977175A Pending JPS5244188A (en) 1975-10-06 1975-10-06 Semiconductor integrated circuit and process for production of the sam e

Country Status (1)

Country Link
JP (1) JPS5244188A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143183A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Semicondutor integrated circuit device and production of the same
JPS564269A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Bipolar cmos semiconductor device and manufacture thereof
JPS6363478A (en) * 1986-09-03 1988-03-19 株式会社タツノ・メカトロニクス Balling area
JPH04117975A (en) * 1990-09-06 1992-04-17 Tele Syst:Yugen Bowling alley management system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143183A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Semicondutor integrated circuit device and production of the same
JPS564269A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Bipolar cmos semiconductor device and manufacture thereof
JPS6363478A (en) * 1986-09-03 1988-03-19 株式会社タツノ・メカトロニクス Balling area
JPH04117975A (en) * 1990-09-06 1992-04-17 Tele Syst:Yugen Bowling alley management system

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