JPS5249777A - Process for production of field effect transistor - Google Patents
Process for production of field effect transistorInfo
- Publication number
- JPS5249777A JPS5249777A JP12603875A JP12603875A JPS5249777A JP S5249777 A JPS5249777 A JP S5249777A JP 12603875 A JP12603875 A JP 12603875A JP 12603875 A JP12603875 A JP 12603875A JP S5249777 A JPS5249777 A JP S5249777A
- Authority
- JP
- Japan
- Prior art keywords
- production
- field effect
- effect transistor
- gate
- reduce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To make an FET of superior high frequency characteristics by providing a poly Si layer in gate part to shorten gate length, reduce source resistance and reduce gate resistance as well.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12603875A JPS5249777A (en) | 1975-10-20 | 1975-10-20 | Process for production of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12603875A JPS5249777A (en) | 1975-10-20 | 1975-10-20 | Process for production of field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5249777A true JPS5249777A (en) | 1977-04-21 |
JPS5742230B2 JPS5742230B2 (en) | 1982-09-07 |
Family
ID=14925119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12603875A Granted JPS5249777A (en) | 1975-10-20 | 1975-10-20 | Process for production of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5249777A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5626474A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Junction type field effect semiconductor device |
JPS60152069A (en) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | Semiconductor device |
JPH01286469A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Manufacture of junction type field effect transistor |
-
1975
- 1975-10-20 JP JP12603875A patent/JPS5249777A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5626474A (en) * | 1979-08-13 | 1981-03-14 | Hitachi Ltd | Junction type field effect semiconductor device |
JPS60152069A (en) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | Semiconductor device |
JPH01286469A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Manufacture of junction type field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS5742230B2 (en) | 1982-09-07 |
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