JPS5219084A - Production method of field effect transistor which uses ion injection method - Google Patents

Production method of field effect transistor which uses ion injection method

Info

Publication number
JPS5219084A
JPS5219084A JP9564275A JP9564275A JPS5219084A JP S5219084 A JPS5219084 A JP S5219084A JP 9564275 A JP9564275 A JP 9564275A JP 9564275 A JP9564275 A JP 9564275A JP S5219084 A JPS5219084 A JP S5219084A
Authority
JP
Japan
Prior art keywords
ion injection
field effect
effect transistor
uses ion
production method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9564275A
Other languages
Japanese (ja)
Other versions
JPS5914903B2 (en
Inventor
Yasunori Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9564275A priority Critical patent/JPS5914903B2/en
Publication of JPS5219084A publication Critical patent/JPS5219084A/en
Publication of JPS5914903B2 publication Critical patent/JPS5914903B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: In order to improve the threshold voltage, gain and carrier mobility by means of forming MISFET with self-align structure through ion injection method.
COPYRIGHT: (C)1977,JPO&Japio
JP9564275A 1975-08-05 1975-08-05 Manufacturing method of field effect transistor using ion implantation method Expired JPS5914903B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9564275A JPS5914903B2 (en) 1975-08-05 1975-08-05 Manufacturing method of field effect transistor using ion implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9564275A JPS5914903B2 (en) 1975-08-05 1975-08-05 Manufacturing method of field effect transistor using ion implantation method

Publications (2)

Publication Number Publication Date
JPS5219084A true JPS5219084A (en) 1977-01-14
JPS5914903B2 JPS5914903B2 (en) 1984-04-06

Family

ID=14143150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9564275A Expired JPS5914903B2 (en) 1975-08-05 1975-08-05 Manufacturing method of field effect transistor using ion implantation method

Country Status (1)

Country Link
JP (1) JPS5914903B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150037A (en) * 1988-12-01 1990-06-08 Fuji Electric Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150037A (en) * 1988-12-01 1990-06-08 Fuji Electric Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5914903B2 (en) 1984-04-06

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