JPS5219084A - Production method of field effect transistor which uses ion injection method - Google Patents
Production method of field effect transistor which uses ion injection methodInfo
- Publication number
- JPS5219084A JPS5219084A JP9564275A JP9564275A JPS5219084A JP S5219084 A JPS5219084 A JP S5219084A JP 9564275 A JP9564275 A JP 9564275A JP 9564275 A JP9564275 A JP 9564275A JP S5219084 A JPS5219084 A JP S5219084A
- Authority
- JP
- Japan
- Prior art keywords
- ion injection
- field effect
- effect transistor
- uses ion
- production method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: In order to improve the threshold voltage, gain and carrier mobility by means of forming MISFET with self-align structure through ion injection method.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9564275A JPS5914903B2 (en) | 1975-08-05 | 1975-08-05 | Manufacturing method of field effect transistor using ion implantation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9564275A JPS5914903B2 (en) | 1975-08-05 | 1975-08-05 | Manufacturing method of field effect transistor using ion implantation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5219084A true JPS5219084A (en) | 1977-01-14 |
JPS5914903B2 JPS5914903B2 (en) | 1984-04-06 |
Family
ID=14143150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9564275A Expired JPS5914903B2 (en) | 1975-08-05 | 1975-08-05 | Manufacturing method of field effect transistor using ion implantation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5914903B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02150037A (en) * | 1988-12-01 | 1990-06-08 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
-
1975
- 1975-08-05 JP JP9564275A patent/JPS5914903B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02150037A (en) * | 1988-12-01 | 1990-06-08 | Fuji Electric Co Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5914903B2 (en) | 1984-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
JPS5267982A (en) | Manufacture of schottky barrier type field effect transistor | |
JPS5382179A (en) | Field effect transistor | |
JPS5219084A (en) | Production method of field effect transistor which uses ion injection method | |
JPS5223275A (en) | Field effect transistor and its manufacturing method | |
JPS5245280A (en) | Field effect transistor of schottky barrier type | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS51123076A (en) | The manufacturing process of field effect transistor | |
JPS5273681A (en) | Field effect transistor | |
JPS51132977A (en) | Junction-type field effect transistor process | |
JPS5347278A (en) | Insulated gate type field effect transistor | |
JPS5229178A (en) | Vertical field effect semiconductive device | |
JPS51113471A (en) | The manufacturing method of flat-shaped field-effect transistor | |
JPS5277592A (en) | Production of semiconductor device | |
JPS5265679A (en) | Semiconductor device | |
JPS5354979A (en) | Production of field effect transistor | |
JPS5227281A (en) | Semiconductor manufacturing process | |
JPS5282078A (en) | Production of mos transistor | |
JPS5382181A (en) | Manufacture for semiconductor device | |
JPS5272185A (en) | Two-gate type field effect transistor | |
JPS52122086A (en) | Insulated gate type field effect rransistor | |
JPS51129185A (en) | Manufacturing method of field efect transistor | |
JPS52180A (en) | Transistor | |
JPS5370666A (en) | Production of semiconductor device | |
JPS5229176A (en) | Method for production of field effect transistor |