JPS5277592A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5277592A JPS5277592A JP15332575A JP15332575A JPS5277592A JP S5277592 A JPS5277592 A JP S5277592A JP 15332575 A JP15332575 A JP 15332575A JP 15332575 A JP15332575 A JP 15332575A JP S5277592 A JPS5277592 A JP S5277592A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- gate
- end part
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve insulation voltage rating by rounding end part of gate by oxidizing gate layer with varying distribution of impurity concentration.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15332575A JPS5277592A (en) | 1975-12-24 | 1975-12-24 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15332575A JPS5277592A (en) | 1975-12-24 | 1975-12-24 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5277592A true JPS5277592A (en) | 1977-06-30 |
Family
ID=15560016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15332575A Pending JPS5277592A (en) | 1975-12-24 | 1975-12-24 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5277592A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163887A (en) * | 1992-11-16 | 1994-06-10 | Victor Co Of Japan Ltd | Semiconductor device and mosfet |
JPH0818045A (en) * | 1990-04-16 | 1996-01-19 | Digital Equip Corp <Dec> | Semiconductor device having decreased time dependency dielectric breakdown |
-
1975
- 1975-12-24 JP JP15332575A patent/JPS5277592A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0818045A (en) * | 1990-04-16 | 1996-01-19 | Digital Equip Corp <Dec> | Semiconductor device having decreased time dependency dielectric breakdown |
JPH06163887A (en) * | 1992-11-16 | 1994-06-10 | Victor Co Of Japan Ltd | Semiconductor device and mosfet |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52156576A (en) | Production of mis semiconductor device | |
JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
JPS5333074A (en) | Production of complementary type insulated gate field effect semiconductor device | |
JPS5382179A (en) | Field effect transistor | |
JPS5277592A (en) | Production of semiconductor device | |
JPS5222481A (en) | Method of manufacturing semiconductor device | |
JPS5265686A (en) | Production of mos semiconductor device | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS524789A (en) | Semiconductor equipment | |
JPS5211776A (en) | Method of manufacturing semiconductor device | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5286086A (en) | Field effect transistor | |
JPS5232683A (en) | Manufacturing process of semiconductor device | |
JPS5272186A (en) | Production of mis type semiconductor device | |
JPS51148378A (en) | Manufacturing method of insulation gate type electric field effect tra nsistor | |
JPS52115191A (en) | Production of insulated gate type transistor | |
JPS5276883A (en) | Production of mos transistor | |
JPS5227281A (en) | Semiconductor manufacturing process | |
JPS5219084A (en) | Production method of field effect transistor which uses ion injection method | |
JPS5376770A (en) | Production of insulated gate field effect transistor | |
JPS5382181A (en) | Manufacture for semiconductor device | |
JPS547881A (en) | Mos field effect transistor | |
JPS52122086A (en) | Insulated gate type field effect rransistor | |
JPS52146575A (en) | Production of semiconductor device | |
JPS51135381A (en) | Semiconductor device and its manufacturing method |