JPS5277592A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5277592A
JPS5277592A JP15332575A JP15332575A JPS5277592A JP S5277592 A JPS5277592 A JP S5277592A JP 15332575 A JP15332575 A JP 15332575A JP 15332575 A JP15332575 A JP 15332575A JP S5277592 A JPS5277592 A JP S5277592A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
gate
end part
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15332575A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15332575A priority Critical patent/JPS5277592A/en
Publication of JPS5277592A publication Critical patent/JPS5277592A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve insulation voltage rating by rounding end part of gate by oxidizing gate layer with varying distribution of impurity concentration.
COPYRIGHT: (C)1977,JPO&Japio
JP15332575A 1975-12-24 1975-12-24 Production of semiconductor device Pending JPS5277592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15332575A JPS5277592A (en) 1975-12-24 1975-12-24 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15332575A JPS5277592A (en) 1975-12-24 1975-12-24 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5277592A true JPS5277592A (en) 1977-06-30

Family

ID=15560016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15332575A Pending JPS5277592A (en) 1975-12-24 1975-12-24 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5277592A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163887A (en) * 1992-11-16 1994-06-10 Victor Co Of Japan Ltd Semiconductor device and mosfet
JPH0818045A (en) * 1990-04-16 1996-01-19 Digital Equip Corp <Dec> Semiconductor device having decreased time dependency dielectric breakdown

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818045A (en) * 1990-04-16 1996-01-19 Digital Equip Corp <Dec> Semiconductor device having decreased time dependency dielectric breakdown
JPH06163887A (en) * 1992-11-16 1994-06-10 Victor Co Of Japan Ltd Semiconductor device and mosfet

Similar Documents

Publication Publication Date Title
JPS52156576A (en) Production of mis semiconductor device
JPS5223277A (en) Method of manufacteuring insulating gate type field effect transistor
JPS5333074A (en) Production of complementary type insulated gate field effect semiconductor device
JPS5382179A (en) Field effect transistor
JPS5277592A (en) Production of semiconductor device
JPS5222481A (en) Method of manufacturing semiconductor device
JPS5265686A (en) Production of mos semiconductor device
JPS524789A (en) Semiconductor equipment
JPS5211776A (en) Method of manufacturing semiconductor device
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5286086A (en) Field effect transistor
JPS5232683A (en) Manufacturing process of semiconductor device
JPS5272186A (en) Production of mis type semiconductor device
JPS51148378A (en) Manufacturing method of insulation gate type electric field effect tra nsistor
JPS52115191A (en) Production of insulated gate type transistor
JPS5276883A (en) Production of mos transistor
JPS5227281A (en) Semiconductor manufacturing process
JPS5219084A (en) Production method of field effect transistor which uses ion injection method
JPS5376770A (en) Production of insulated gate field effect transistor
JPS5382181A (en) Manufacture for semiconductor device
JPS547881A (en) Mos field effect transistor
JPS52122086A (en) Insulated gate type field effect rransistor
JPS52146575A (en) Production of semiconductor device
JPS51135381A (en) Semiconductor device and its manufacturing method
JPS5228885A (en) Method for production of semiconductive emitter device