JPS53143183A - Semicondutor integrated circuit device and production of the same - Google Patents

Semicondutor integrated circuit device and production of the same

Info

Publication number
JPS53143183A
JPS53143183A JP5770677A JP5770677A JPS53143183A JP S53143183 A JPS53143183 A JP S53143183A JP 5770677 A JP5770677 A JP 5770677A JP 5770677 A JP5770677 A JP 5770677A JP S53143183 A JPS53143183 A JP S53143183A
Authority
JP
Japan
Prior art keywords
production
same
integrated circuit
circuit device
semicondutor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5770677A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5770677A priority Critical patent/JPS53143183A/en
Publication of JPS53143183A publication Critical patent/JPS53143183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Abstract

PURPOSE:To produce a CJ type FET device by selectively forming p layer and n layer on one main surface of a substrate respectively through epitaxial growth.
JP5770677A 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same Pending JPS53143183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5770677A JPS53143183A (en) 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5770677A JPS53143183A (en) 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same

Publications (1)

Publication Number Publication Date
JPS53143183A true JPS53143183A (en) 1978-12-13

Family

ID=13063377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5770677A Pending JPS53143183A (en) 1977-05-20 1977-05-20 Semicondutor integrated circuit device and production of the same

Country Status (1)

Country Link
JP (1) JPS53143183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098964A1 (en) * 2004-04-08 2005-10-20 Austriamicrosystems Ag High voltage depletion layer field effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025181A (en) * 1973-02-26 1975-03-17
JPS5244188A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor integrated circuit and process for production of the sam e
JPS5253678A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Semiconductor integrated circuit and productin of the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025181A (en) * 1973-02-26 1975-03-17
JPS5244188A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor integrated circuit and process for production of the sam e
JPS5253678A (en) * 1975-10-29 1977-04-30 Hitachi Ltd Semiconductor integrated circuit and productin of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098964A1 (en) * 2004-04-08 2005-10-20 Austriamicrosystems Ag High voltage depletion layer field effect transistor
KR100962233B1 (en) 2004-04-08 2010-06-11 오스트리아마이크로시스템즈 아게 High Voltage Junction Field Effect Transistor
US7781809B2 (en) 2004-04-08 2010-08-24 Austriamicrosystems Ag High voltage depletion layer field effect transistor
DE102004018153B4 (en) * 2004-04-08 2012-06-14 Austriamicrosystems Ag High-voltage junction field-effect transistor with retrograde gate well and method for its production
DE102004018153B9 (en) * 2004-04-08 2012-08-23 Austriamicrosystems Ag High-voltage junction field-effect transistor with retrograde gate well and method for its production

Similar Documents

Publication Publication Date Title
JPS543480A (en) Manufacture of semiconductor device
JPS53104156A (en) Manufacture for semiconductor device
JPS5324277A (en) Semiconductor devic e and its production
JPS5283070A (en) Production of semiconductor device
JPS53143183A (en) Semicondutor integrated circuit device and production of the same
JPS53128285A (en) Semiconductor device and production of the same
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS542657A (en) Manufacture for semiconductor device
JPS51138394A (en) Semiconductor device
JPS53115181A (en) Production of semiconductor device
JPS5368165A (en) Production of semiconductor device
JPS5264285A (en) Production of compositemetal layer of integrated circuit device
JPS539488A (en) Production of semiconductor device
JPS5333581A (en) Production of semiconductor device
JPS5394191A (en) Semiconductor device
JPS53104185A (en) Production of semiconductor device
JPS5412265A (en) Production of semiconductor elements
JPS5329668A (en) Production of semiconductor device
JPS52139377A (en) Production of semiconductor device
JPS545391A (en) Manufacture of semiconductor device
JPS5342682A (en) Junction type field effect transistor and its production
JPS53139476A (en) Manufacture of semiconductor device
JPS52142974A (en) Semiconductor device
JPS53131765A (en) Production of semiconductor device
JPS5317286A (en) Production of semiconductor device