JPS53104185A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS53104185A
JPS53104185A JP1819377A JP1819377A JPS53104185A JP S53104185 A JPS53104185 A JP S53104185A JP 1819377 A JP1819377 A JP 1819377A JP 1819377 A JP1819377 A JP 1819377A JP S53104185 A JPS53104185 A JP S53104185A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
insulating film
lift
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1819377A
Other languages
Japanese (ja)
Other versions
JPS6156618B2 (en
Inventor
Atsushi Saiki
Kazuyoshi Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1819377A priority Critical patent/JPS53104185A/en
Publication of JPS53104185A publication Critical patent/JPS53104185A/en
Publication of JPS6156618B2 publication Critical patent/JPS6156618B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a multilayer wiring which has minute intervals and a plane surface by forming an inorganic insulating film on a high-polymer insulating film and using it as a mask at a lift-off material removal time.
JP1819377A 1977-02-23 1977-02-23 Production of semiconductor device Granted JPS53104185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1819377A JPS53104185A (en) 1977-02-23 1977-02-23 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1819377A JPS53104185A (en) 1977-02-23 1977-02-23 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53104185A true JPS53104185A (en) 1978-09-11
JPS6156618B2 JPS6156618B2 (en) 1986-12-03

Family

ID=11964780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1819377A Granted JPS53104185A (en) 1977-02-23 1977-02-23 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53104185A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60144973A (en) * 1983-12-05 1985-07-31 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Shortcircuit thin film field effect transistor
JPS60164364A (en) * 1984-02-07 1985-08-27 Seiko Instr & Electronics Ltd Manufacture of thin film semiconductor device
US7968895B2 (en) 2007-05-30 2011-06-28 Au Optronics Corp. Conductor structure, pixel structure, and methods of forming the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60144973A (en) * 1983-12-05 1985-07-31 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Shortcircuit thin film field effect transistor
JPS60164364A (en) * 1984-02-07 1985-08-27 Seiko Instr & Electronics Ltd Manufacture of thin film semiconductor device
US7968895B2 (en) 2007-05-30 2011-06-28 Au Optronics Corp. Conductor structure, pixel structure, and methods of forming the same
US8101951B2 (en) 2007-05-30 2012-01-24 Au Optronics Corp. Conductor structure, pixel structure, and methods of forming the same
US8445339B2 (en) 2007-05-30 2013-05-21 Au Optronics Corp. Conductor structure, pixel structure, and methods of forming the same

Also Published As

Publication number Publication date
JPS6156618B2 (en) 1986-12-03

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