JPS53104185A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS53104185A JPS53104185A JP1819377A JP1819377A JPS53104185A JP S53104185 A JPS53104185 A JP S53104185A JP 1819377 A JP1819377 A JP 1819377A JP 1819377 A JP1819377 A JP 1819377A JP S53104185 A JPS53104185 A JP S53104185A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- insulating film
- lift
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain a multilayer wiring which has minute intervals and a plane surface by forming an inorganic insulating film on a high-polymer insulating film and using it as a mask at a lift-off material removal time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1819377A JPS53104185A (en) | 1977-02-23 | 1977-02-23 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1819377A JPS53104185A (en) | 1977-02-23 | 1977-02-23 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53104185A true JPS53104185A (en) | 1978-09-11 |
JPS6156618B2 JPS6156618B2 (en) | 1986-12-03 |
Family
ID=11964780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1819377A Granted JPS53104185A (en) | 1977-02-23 | 1977-02-23 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53104185A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60144973A (en) * | 1983-12-05 | 1985-07-31 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | Shortcircuit thin film field effect transistor |
JPS60164364A (en) * | 1984-02-07 | 1985-08-27 | Seiko Instr & Electronics Ltd | Manufacture of thin film semiconductor device |
US7968895B2 (en) | 2007-05-30 | 2011-06-28 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
-
1977
- 1977-02-23 JP JP1819377A patent/JPS53104185A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60144973A (en) * | 1983-12-05 | 1985-07-31 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | Shortcircuit thin film field effect transistor |
JPS60164364A (en) * | 1984-02-07 | 1985-08-27 | Seiko Instr & Electronics Ltd | Manufacture of thin film semiconductor device |
US7968895B2 (en) | 2007-05-30 | 2011-06-28 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
US8101951B2 (en) | 2007-05-30 | 2012-01-24 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
US8445339B2 (en) | 2007-05-30 | 2013-05-21 | Au Optronics Corp. | Conductor structure, pixel structure, and methods of forming the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6156618B2 (en) | 1986-12-03 |
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Legal Events
Date | Code | Title | Description |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
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|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20080606 |
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FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090606 Year of fee payment: 12 |
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LAPS | Cancellation because of no payment of annual fees |