JPS5245885A - Semiconductor integrated circuit device and process for production of same - Google Patents
Semiconductor integrated circuit device and process for production of sameInfo
- Publication number
- JPS5245885A JPS5245885A JP50120731A JP12073175A JPS5245885A JP S5245885 A JPS5245885 A JP S5245885A JP 50120731 A JP50120731 A JP 50120731A JP 12073175 A JP12073175 A JP 12073175A JP S5245885 A JPS5245885 A JP S5245885A
- Authority
- JP
- Japan
- Prior art keywords
- production
- same
- integrated circuit
- semiconductor integrated
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/024—Integrated injection logic structures [I2L] using field effect injector structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To provide a gate electrode that should form an inversion layer on the surface of the base region of a lateral transistor, on said base region by way of an insulating film, thereby reducing an occupying area and increasing the scale of integration of an IIL ligic circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50120731A JPS5245885A (en) | 1975-10-08 | 1975-10-08 | Semiconductor integrated circuit device and process for production of same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50120731A JPS5245885A (en) | 1975-10-08 | 1975-10-08 | Semiconductor integrated circuit device and process for production of same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5245885A true JPS5245885A (en) | 1977-04-11 |
Family
ID=14793581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50120731A Pending JPS5245885A (en) | 1975-10-08 | 1975-10-08 | Semiconductor integrated circuit device and process for production of same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5245885A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55159900U (en) * | 1979-05-01 | 1980-11-17 | ||
US4395723A (en) * | 1980-05-27 | 1983-07-26 | Eliyahou Harari | Floating substrate dynamic RAM cell with lower punch-through means |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51117585A (en) * | 1975-04-09 | 1976-10-15 | Fujitsu Ltd | Semiconductor equipment |
JPS5210088A (en) * | 1975-07-15 | 1977-01-26 | Nec Corp | Structure of semiconductor integrated circuit |
-
1975
- 1975-10-08 JP JP50120731A patent/JPS5245885A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51117585A (en) * | 1975-04-09 | 1976-10-15 | Fujitsu Ltd | Semiconductor equipment |
JPS5210088A (en) * | 1975-07-15 | 1977-01-26 | Nec Corp | Structure of semiconductor integrated circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55159900U (en) * | 1979-05-01 | 1980-11-17 | ||
US4395723A (en) * | 1980-05-27 | 1983-07-26 | Eliyahou Harari | Floating substrate dynamic RAM cell with lower punch-through means |
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