JPS51130183A - Semiconductor ic and its process - Google Patents

Semiconductor ic and its process

Info

Publication number
JPS51130183A
JPS51130183A JP50054839A JP5483975A JPS51130183A JP S51130183 A JPS51130183 A JP S51130183A JP 50054839 A JP50054839 A JP 50054839A JP 5483975 A JP5483975 A JP 5483975A JP S51130183 A JPS51130183 A JP S51130183A
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor devices
wirings
reducing
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50054839A
Other languages
Japanese (ja)
Other versions
JPS5843912B2 (en
Inventor
Eisuke Ichinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50054839A priority Critical patent/JPS5843912B2/en
Priority to US05/667,445 priority patent/US4069067A/en
Publication of JPS51130183A publication Critical patent/JPS51130183A/en
Publication of JPS5843912B2 publication Critical patent/JPS5843912B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:Achieve high integration degree of semiconductor devices which have p and n-channel semiconductor devices and have small surface step difference by reducing the size of the contact section between the semiconductor and wirings.
JP50054839A 1975-03-20 1975-05-06 Method for manufacturing semiconductor integrated circuit device Expired JPS5843912B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50054839A JPS5843912B2 (en) 1975-05-06 1975-05-06 Method for manufacturing semiconductor integrated circuit device
US05/667,445 US4069067A (en) 1975-03-20 1976-03-16 Method of making a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50054839A JPS5843912B2 (en) 1975-05-06 1975-05-06 Method for manufacturing semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS51130183A true JPS51130183A (en) 1976-11-12
JPS5843912B2 JPS5843912B2 (en) 1983-09-29

Family

ID=12981784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50054839A Expired JPS5843912B2 (en) 1975-03-20 1975-05-06 Method for manufacturing semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5843912B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478985A (en) * 1977-11-17 1979-06-23 Rca Corp Semiconductor and method of producing same
JPS54101680A (en) * 1978-01-27 1979-08-10 Sony Corp Semiconductor device
JPS54107280A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor integrated circuit unit
JPS54107279A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor device
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS5650535A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
JPS6169149A (en) * 1985-09-06 1986-04-09 Nec Corp Manufacture of integrated circuit device
JPS62295446A (en) * 1987-06-12 1987-12-22 Nec Corp Semiconductor integrated circuit device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478985A (en) * 1977-11-17 1979-06-23 Rca Corp Semiconductor and method of producing same
JPS54101680A (en) * 1978-01-27 1979-08-10 Sony Corp Semiconductor device
JPS6329828B2 (en) * 1978-02-10 1988-06-15 Nippon Electric Co
JPS54107280A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor integrated circuit unit
JPS54107279A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor device
JPS5568675A (en) * 1978-11-17 1980-05-23 Toshiba Corp Fabrication of complementary mos transistor
JPS6349387B2 (en) * 1978-11-17 1988-10-04 Tokyo Shibaura Electric Co
JPS5650535A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS6150388B2 (en) * 1979-10-29 1986-11-04 Suwa Seikosha Kk
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
JPH0244783B2 (en) * 1979-10-29 1990-10-05 Hitachi Kinzoku Kk
JPS6169149A (en) * 1985-09-06 1986-04-09 Nec Corp Manufacture of integrated circuit device
JPS62295446A (en) * 1987-06-12 1987-12-22 Nec Corp Semiconductor integrated circuit device
JPH0413862B2 (en) * 1987-06-12 1992-03-11 Nippon Electric Co

Also Published As

Publication number Publication date
JPS5843912B2 (en) 1983-09-29

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