JPS5230390A - Integrated circuit of the semiconductor - Google Patents

Integrated circuit of the semiconductor

Info

Publication number
JPS5230390A
JPS5230390A JP10595175A JP10595175A JPS5230390A JP S5230390 A JPS5230390 A JP S5230390A JP 10595175 A JP10595175 A JP 10595175A JP 10595175 A JP10595175 A JP 10595175A JP S5230390 A JPS5230390 A JP S5230390A
Authority
JP
Japan
Prior art keywords
semiconductor
integrated circuit
single crystal
constructs
integrating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10595175A
Other languages
Japanese (ja)
Inventor
Yoshikazu Hosokawa
Tatsuya Kamei
Junichiro Kitano
Yutaka Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10595175A priority Critical patent/JPS5230390A/en
Publication of JPS5230390A publication Critical patent/JPS5230390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To attempt the decrease of number of the necessary single crystal Si by integrating the several circuit elements in one of single crystal Si which constructs the substrate separating dielectrics.
JP10595175A 1975-09-03 1975-09-03 Integrated circuit of the semiconductor Pending JPS5230390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10595175A JPS5230390A (en) 1975-09-03 1975-09-03 Integrated circuit of the semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10595175A JPS5230390A (en) 1975-09-03 1975-09-03 Integrated circuit of the semiconductor

Publications (1)

Publication Number Publication Date
JPS5230390A true JPS5230390A (en) 1977-03-08

Family

ID=14421127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10595175A Pending JPS5230390A (en) 1975-09-03 1975-09-03 Integrated circuit of the semiconductor

Country Status (1)

Country Link
JP (1) JPS5230390A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132759U (en) * 1980-03-10 1981-10-08
JPS61162449A (en) * 1985-01-07 1986-07-23 Oji Yuka Gouseishi Kk Method of cutting or winding resin film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56132759U (en) * 1980-03-10 1981-10-08
JPS61162449A (en) * 1985-01-07 1986-07-23 Oji Yuka Gouseishi Kk Method of cutting or winding resin film
JPH0515626B2 (en) * 1985-01-07 1993-03-02 Oji Yuka Goseishi Kk

Similar Documents

Publication Publication Date Title
JPS5270780A (en) Manufacture of semiconductor device
IL47862A (en) Silicon crystals, their production and electronic components containing them
GB1542096A (en) Monolithically integrated semiconductor circuit arrangement
JPS51130183A (en) Semiconductor ic and its process
JPS5222878A (en) Process for silicon semiconductor devices
JPS5234671A (en) Semiconductor integrated circuit
JPS5230390A (en) Integrated circuit of the semiconductor
JPS5223251A (en) Semiconductor circuit
JPS5312261A (en) Output circuit of semiconductor device
JPS53128285A (en) Semiconductor device and production of the same
JPS51145267A (en) Manufacture of semiconductor device
JPS52101979A (en) Semiconductor device
JPS51134579A (en) Semiconductor device
JPS5246777A (en) Semiconductor device
JPS5226185A (en) Semi-conductor unit
JPS5435791A (en) Semiconductor pressure sensor
JPS5441666A (en) Semiconductor integrated circuit element
JPS5248367A (en) Electronic timepiece
JPS51115776A (en) Glass-bond-type semiconductor element
JPS51123552A (en) Transistor ciqcuit
JPS5352379A (en) Production of dielectric isolated ic substrate
JPS5233449A (en) Trap unit
JPS5223266A (en) Semiconductor device
JPS51139287A (en) Semi-conductor integrated circuit device
JPS52155982A (en) Semiconductor device