JPS5222878A - Process for silicon semiconductor devices - Google Patents

Process for silicon semiconductor devices

Info

Publication number
JPS5222878A
JPS5222878A JP51096887A JP9688776A JPS5222878A JP S5222878 A JPS5222878 A JP S5222878A JP 51096887 A JP51096887 A JP 51096887A JP 9688776 A JP9688776 A JP 9688776A JP S5222878 A JPS5222878 A JP S5222878A
Authority
JP
Japan
Prior art keywords
semiconductor devices
silicon semiconductor
silicon
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51096887A
Other languages
Japanese (ja)
Other versions
JPS5943816B2 (en
Inventor
Miyuurubaueru Arufureeto
Deiitsue Uorufugangu
Roishieru Konraato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5222878A publication Critical patent/JPS5222878A/en
Publication of JPS5943816B2 publication Critical patent/JPS5943816B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP51096887A 1975-08-13 1976-08-13 Method for manufacturing silicon semiconductor devices Expired JPS5943816B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752536174 DE2536174C3 (en) 1975-08-13 1975-08-13 Process for producing polycrystalline silicon layers for semiconductor components

Publications (2)

Publication Number Publication Date
JPS5222878A true JPS5222878A (en) 1977-02-21
JPS5943816B2 JPS5943816B2 (en) 1984-10-24

Family

ID=5953949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51096887A Expired JPS5943816B2 (en) 1975-08-13 1976-08-13 Method for manufacturing silicon semiconductor devices

Country Status (2)

Country Link
JP (1) JPS5943816B2 (en)
DE (1) DE2536174C3 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559231B2 (en) 2000-11-30 2003-05-06 Kansai Paint Co., Ltd. Curing type water base resin composition
US6706818B2 (en) 2001-09-26 2004-03-16 Kansai Paint Co., Ltd. Curable resin composition
JP2008522422A (en) * 2004-11-30 2008-06-26 コミサリア、ア、レネルジ、アトミク Rectangular semiconductor support for microelectronics and manufacturing method thereof
US7847050B2 (en) 2007-04-20 2010-12-07 Shin-Etsu Chemical Co., Ltd. Crosslinkable organopolysiloxane compositions
US8298112B2 (en) 2006-08-28 2012-10-30 Ntn Corporation Device for switching between normal and reverse drive force
WO2014077363A1 (en) 2012-11-16 2014-05-22 旭化成ケミカルズ株式会社 Semicarbazide composition, method for producing semicarbazide composition, aqueous resin composition and composite

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130009B (en) * 1982-11-12 1986-04-03 Rca Corp Polycrystalline silicon layers for semiconductor devices
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
DE102012012088A1 (en) 2012-06-18 2013-12-19 Jean-Paul Theis Process for producing semiconductor thin films on foreign substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same
BE666629A (en) * 1964-08-04
US3558374A (en) * 1968-01-15 1971-01-26 Ibm Polycrystalline film having controlled grain size and method of making same
DE1900116C3 (en) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of high-purity monocrystalline layers consisting of silicon

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559231B2 (en) 2000-11-30 2003-05-06 Kansai Paint Co., Ltd. Curing type water base resin composition
US6706818B2 (en) 2001-09-26 2004-03-16 Kansai Paint Co., Ltd. Curable resin composition
JP2008522422A (en) * 2004-11-30 2008-06-26 コミサリア、ア、レネルジ、アトミク Rectangular semiconductor support for microelectronics and manufacturing method thereof
US8298112B2 (en) 2006-08-28 2012-10-30 Ntn Corporation Device for switching between normal and reverse drive force
US7847050B2 (en) 2007-04-20 2010-12-07 Shin-Etsu Chemical Co., Ltd. Crosslinkable organopolysiloxane compositions
WO2014077363A1 (en) 2012-11-16 2014-05-22 旭化成ケミカルズ株式会社 Semicarbazide composition, method for producing semicarbazide composition, aqueous resin composition and composite

Also Published As

Publication number Publication date
JPS5943816B2 (en) 1984-10-24
DE2536174C3 (en) 1983-11-03
DE2536174B2 (en) 1978-10-12
DE2536174A1 (en) 1977-03-17

Similar Documents

Publication Publication Date Title
JPS5264872A (en) Apparatus for holding semiconductor wafers
GB1542651A (en) Semiconductor devices
JPS5245288A (en) Semiconductor device
JPS51117880A (en) Semiconductor device
JPS527678A (en) Semiconductor device
JPS5216990A (en) Semiconductor device
JPS52117564A (en) Device for treating computerrcontrolled semiconductor wafer
ZA766145B (en) Semiconductor devices
GB1548877A (en) Semiconductor devices
GB1553417A (en) Semiconductor device manufacture
GB1558349A (en) Making semiconductor device
JPS5279661A (en) Semiconductor device
JPS5238861A (en) Device used for semiconductor filter
JPS5282191A (en) Semiconductor ic
GB1552161A (en) Semiconductor devices
JPS5239377A (en) Method of manufacturing semiconductor device
JPS51123083A (en) Integrated semiconductor device
JPS5238892A (en) Semiconductor device
GB1554273A (en) Semiconductor device manufacture
JPS5234676A (en) Semiconductor device
JPS52119068A (en) Semiconductor device
JPS529380A (en) Semiconductor device
JPS5250685A (en) Apparatus for dividing wafers
JPS51134576A (en) Method of manufacturing semiconductor device
JPS5222878A (en) Process for silicon semiconductor devices