JPS51147187A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51147187A
JPS51147187A JP50071242A JP7124275A JPS51147187A JP S51147187 A JPS51147187 A JP S51147187A JP 50071242 A JP50071242 A JP 50071242A JP 7124275 A JP7124275 A JP 7124275A JP S51147187 A JPS51147187 A JP S51147187A
Authority
JP
Japan
Prior art keywords
semiconductor device
thysister
cmis
prevents
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50071242A
Other languages
Japanese (ja)
Other versions
JPS6056310B2 (en
Inventor
Koichi Mikome
Shiro Araya
Mitsumasa Ashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50071242A priority Critical patent/JPS6056310B2/en
Publication of JPS51147187A publication Critical patent/JPS51147187A/en
Publication of JPS6056310B2 publication Critical patent/JPS6056310B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:The CMIS'IC which prevents the generation of thysister effect.
JP50071242A 1975-06-12 1975-06-12 semiconductor equipment Expired JPS6056310B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071242A JPS6056310B2 (en) 1975-06-12 1975-06-12 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071242A JPS6056310B2 (en) 1975-06-12 1975-06-12 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS51147187A true JPS51147187A (en) 1976-12-17
JPS6056310B2 JPS6056310B2 (en) 1985-12-09

Family

ID=13455023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071242A Expired JPS6056310B2 (en) 1975-06-12 1975-06-12 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6056310B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191371A (en) * 1983-04-14 1984-10-30 Nec Corp Complementary type metal oxide semiconductor field-effect device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RCA ELECTRONIC COMPONENTS DIGITAL INTEGRATED CIRCUITS APPLICATION NOTE=1970 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191371A (en) * 1983-04-14 1984-10-30 Nec Corp Complementary type metal oxide semiconductor field-effect device
JPH0313754B2 (en) * 1983-04-14 1991-02-25 Nippon Electric Co

Also Published As

Publication number Publication date
JPS6056310B2 (en) 1985-12-09

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