JPS5335481A - Production of insulating gate type field effect transistor - Google Patents

Production of insulating gate type field effect transistor

Info

Publication number
JPS5335481A
JPS5335481A JP11056176A JP11056176A JPS5335481A JP S5335481 A JPS5335481 A JP S5335481A JP 11056176 A JP11056176 A JP 11056176A JP 11056176 A JP11056176 A JP 11056176A JP S5335481 A JPS5335481 A JP S5335481A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11056176A
Other languages
Japanese (ja)
Inventor
Yutaka Torii
Isao Okura
Masashi Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11056176A priority Critical patent/JPS5335481A/en
Publication of JPS5335481A publication Critical patent/JPS5335481A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: In case of forming a gate area, impurity ions are injected with the inclination of a prescribed angle with respect to the substrate surface, so that a length can be short and the production course can be simplified.
COPYRIGHT: (C)1978,JPO&Japio
JP11056176A 1976-09-14 1976-09-14 Production of insulating gate type field effect transistor Pending JPS5335481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11056176A JPS5335481A (en) 1976-09-14 1976-09-14 Production of insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11056176A JPS5335481A (en) 1976-09-14 1976-09-14 Production of insulating gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5335481A true JPS5335481A (en) 1978-04-01

Family

ID=14538944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11056176A Pending JPS5335481A (en) 1976-09-14 1976-09-14 Production of insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5335481A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435682A (en) * 1977-08-26 1979-03-15 Agency Of Ind Science & Technol Manufacture of field effect transistor
EP0104057A2 (en) * 1982-09-20 1984-03-28 Morton Thiokol, Inc. Radiation curable coating for photographic laminate
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
JPS6388555A (en) * 1986-10-02 1988-04-19 Asahi Chem Ind Co Ltd Photosensitive resin printing plate for printing corrugated fiberboard
US4786586A (en) * 1985-08-06 1988-11-22 Morton Thiokol, Inc. Radiation curable coating for photographic laminate
US5288571A (en) * 1986-10-02 1994-02-22 Asahi Kasei Kogyo Kabushiki Kaisha Photoresin printing plate for use in printing a corrugated board
JPH082628A (en) * 1994-06-14 1996-01-09 Ishikawa Shoko Kk Chute device
US6071781A (en) * 1996-07-15 2000-06-06 Nec Corporation Method of fabricating lateral MOS transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4877773A (en) * 1972-01-19 1973-10-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4877773A (en) * 1972-01-19 1973-10-19

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435682A (en) * 1977-08-26 1979-03-15 Agency Of Ind Science & Technol Manufacture of field effect transistor
EP0104057A2 (en) * 1982-09-20 1984-03-28 Morton Thiokol, Inc. Radiation curable coating for photographic laminate
US4786586A (en) * 1985-08-06 1988-11-22 Morton Thiokol, Inc. Radiation curable coating for photographic laminate
US4679311A (en) * 1985-12-12 1987-07-14 Allied Corporation Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
JPS6388555A (en) * 1986-10-02 1988-04-19 Asahi Chem Ind Co Ltd Photosensitive resin printing plate for printing corrugated fiberboard
US5288571A (en) * 1986-10-02 1994-02-22 Asahi Kasei Kogyo Kabushiki Kaisha Photoresin printing plate for use in printing a corrugated board
JPH082628A (en) * 1994-06-14 1996-01-09 Ishikawa Shoko Kk Chute device
US6071781A (en) * 1996-07-15 2000-06-06 Nec Corporation Method of fabricating lateral MOS transistor

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