JPS52155069A - Production of field effect control type semiconductor device - Google Patents
Production of field effect control type semiconductor deviceInfo
- Publication number
- JPS52155069A JPS52155069A JP7255076A JP7255076A JPS52155069A JP S52155069 A JPS52155069 A JP S52155069A JP 7255076 A JP7255076 A JP 7255076A JP 7255076 A JP7255076 A JP 7255076A JP S52155069 A JPS52155069 A JP S52155069A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- effect control
- type semiconductor
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To eliminate the adverse influence of scattered ions from the bottom face of recesses and form gate regions only on the bottom face by covering the inside surface of the recesses with an insulation film of a specified thickness thereafter implanting impurity ions through said film at the time of forming the bottom face part of the recesses in the surface of a semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7255076A JPS52155069A (en) | 1976-06-18 | 1976-06-18 | Production of field effect control type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7255076A JPS52155069A (en) | 1976-06-18 | 1976-06-18 | Production of field effect control type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52155069A true JPS52155069A (en) | 1977-12-23 |
Family
ID=13492568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7255076A Pending JPS52155069A (en) | 1976-06-18 | 1976-06-18 | Production of field effect control type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52155069A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003105195A2 (en) * | 2002-06-05 | 2003-12-18 | Infineon Technologies Ag | Method to perform deep implants without scattering to adjacent areas |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113581A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd | DENKAIKOKATORANJISUTAOYOBISONO SEIHO |
-
1976
- 1976-06-18 JP JP7255076A patent/JPS52155069A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5113581A (en) * | 1974-07-24 | 1976-02-03 | Hitachi Ltd | DENKAIKOKATORANJISUTAOYOBISONO SEIHO |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003105195A2 (en) * | 2002-06-05 | 2003-12-18 | Infineon Technologies Ag | Method to perform deep implants without scattering to adjacent areas |
WO2003105195A3 (en) * | 2002-06-05 | 2004-04-01 | Infineon Technologies Ag | Method to perform deep implants without scattering to adjacent areas |
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