JPS52155069A - Production of field effect control type semiconductor device - Google Patents

Production of field effect control type semiconductor device

Info

Publication number
JPS52155069A
JPS52155069A JP7255076A JP7255076A JPS52155069A JP S52155069 A JPS52155069 A JP S52155069A JP 7255076 A JP7255076 A JP 7255076A JP 7255076 A JP7255076 A JP 7255076A JP S52155069 A JPS52155069 A JP S52155069A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
effect control
type semiconductor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7255076A
Other languages
Japanese (ja)
Inventor
Yasunari Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7255076A priority Critical patent/JPS52155069A/en
Publication of JPS52155069A publication Critical patent/JPS52155069A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate the adverse influence of scattered ions from the bottom face of recesses and form gate regions only on the bottom face by covering the inside surface of the recesses with an insulation film of a specified thickness thereafter implanting impurity ions through said film at the time of forming the bottom face part of the recesses in the surface of a semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP7255076A 1976-06-18 1976-06-18 Production of field effect control type semiconductor device Pending JPS52155069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7255076A JPS52155069A (en) 1976-06-18 1976-06-18 Production of field effect control type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7255076A JPS52155069A (en) 1976-06-18 1976-06-18 Production of field effect control type semiconductor device

Publications (1)

Publication Number Publication Date
JPS52155069A true JPS52155069A (en) 1977-12-23

Family

ID=13492568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7255076A Pending JPS52155069A (en) 1976-06-18 1976-06-18 Production of field effect control type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52155069A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003105195A2 (en) * 2002-06-05 2003-12-18 Infineon Technologies Ag Method to perform deep implants without scattering to adjacent areas

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113581A (en) * 1974-07-24 1976-02-03 Hitachi Ltd DENKAIKOKATORANJISUTAOYOBISONO SEIHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113581A (en) * 1974-07-24 1976-02-03 Hitachi Ltd DENKAIKOKATORANJISUTAOYOBISONO SEIHO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003105195A2 (en) * 2002-06-05 2003-12-18 Infineon Technologies Ag Method to perform deep implants without scattering to adjacent areas
WO2003105195A3 (en) * 2002-06-05 2004-04-01 Infineon Technologies Ag Method to perform deep implants without scattering to adjacent areas

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